CGHV35150 hemt equivalent, gan hemt.
* Rated Power = 150 W @ TCASE = 85°C
* Operating Frequency = 2.9 - 3.5 GHz
* Transient 100 µsec - 300 µsec @ 20% Duty Cycle
* 13.5 dB Power Gain @ TCASE.
The transistor is supplied in a ceramic/metal flange and pill package.
PNPa: CckGaHgVe3T5y1p5e0: F44/0C1G9H3V/345410520.
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