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CGHV35150 Datasheet Gan Hemt

Manufacturer: Cree (now Wolfspeed)

Overview: CGHV35150 150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems Cree’s CGHV35150 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150 ideal for 2.9 - 3.5 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange and pill package. PNPa: CckGaHgVe3T5y1p5e0: F44/0C1G9H3V/3454105200P6 Typical Performance 3.1 - 3.5 GHz (TC = 85˚C) Parameter 3.1 GHz 3.2 GHz Output Power 180 180 Gain 13.5 13.5 Drain Efficiency 50 49 3.3 GHz 180 13.5 50 3.4 GHz 170 13.3 49 3.5 GHz 150 12.

Key Features

  • Rated Power = 150 W @ TCASE = 85°C.
  • Operating Frequency = 2.9 - 3.5 GHz.
  • Transient 100 µsec - 300 µsec @ 20% Duty Cycle.
  • 13.5 dB Power Gain @ TCASE = 85°C.
  • 50 % Typical Drain Efficiency @ TCASE = 85°C.
  • Input Matched.

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