• Part: CGHV35150
  • Manufacturer: Cree
  • Size: 506.83 KB
Download CGHV35150 Datasheet PDF
CGHV35150 datasheet preview
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CGHV35150 Key Features

  • Rated Power = 150 W @ TCASE = 85°C
  • Operating Frequency = 2.9
  • 3.5 GHz
  • Transient 100 µsec
  • 300 µsec @ 20% Duty Cycle
  • 13.5 dB Power Gain @ TCASE = 85°C
  • 50 % Typical Drain Efficiency @ TCASE = 85°C
  • Input Matched
  • <0.3 dB Pulsed Amplitude Droop
  • May 2015

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CGHV35150 Description

CGHV35150 150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems Cree’s CGHV35150 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150 ideal for 2.9 - 3.5 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange and pill package. Measured in the...