Datasheet4U Logo Datasheet4U.com

CY62162GE - 16-Mbit (512K x 32) Static RAM

Download the CY62162GE datasheet PDF. This datasheet also covers the CY62162G variant, as both devices belong to the same 16-mbit (512k x 32) static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

The CY62162G and CY62162GE devices are high performance CMOS MoBL SRAM organized as 512K words by 32-bits.

Both CY62162G and CY62162GE are available with dual chip enables.

Key Features

  • Ultra-low standby power.
  • Typical standby current: 5.5 A.
  • Maximum standby current: 16 A.
  • High speed: 45 ns/55 ns.
  • Embedded error-correcting code (ECC) for single-bit error correction.
  • Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V.
  • 1.0-V data retention.
  • Transistor-transistor logic (TTL) compatible inputs and outputs.
  • ERR pin to indicate 1-bit error detection and correction.
  • Easy memory expansion with CE1 and CE2 features.
  • Available in.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY62162G-Cypress.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CY62162G/CY62162GE MoBL 16-Mbit (512K × 32) Static RAM with Error-Correcting Code (ECC) 16-Mbit (512K × 32) Static RAM with Error-Correcting Code (ECC) Features ■ Ultra-low standby power ❐ Typical standby current: 5.5 A ❐ Maximum standby current: 16 A ■ High speed: 45 ns/55 ns ■ Embedded error-correcting code (ECC) for single-bit error correction ■ Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V ■ 1.0-V data retention ■ Transistor-transistor logic (TTL) compatible inputs and outputs ■ ERR pin to indicate 1-bit error detection and correction ■ Easy memory expansion with CE1 and CE2 features ■ Available in Pb-free 119-ball PBGA package, 512K × 32 bits SRAM Functional Description The CY62162G and CY62162GE devices are high performance CMOS MoBL SRAM organized as 512K words by 32-bits.