CY14B104LA
CY14B104LA is 4-Mbit (512K x 8/256K x 16) nvSRAM manufactured by Cypress.
Features
- 20 ns, 25 ns, and 45 ns access times
- Internally organized as 512K × 8 (CY14B104LA) or 256K × 16
(CY14B104NA)
- Packages
- 44-/54-pin thin small outline package (TSOP) Type II
- 48-ball fine-pitch ball grid array (FBGA)
- Pb-free and restriction of hazardous substances (Ro HS) pliant
- Hands off automatic STORE on power-down with only a small capacitor
Functional Description
- STORE to Quantum Trap non-volatile elements initiated by software, device pin, or Auto Store on power-down
- RECALL to SRAM initiated by software or power-up
- Infinite read, write, and recall cycles
- 1 million STORE cycles to Quantum Trap
- 20 year data retention
- Single 3 V +20,
- 10 operation
- Industrial temperature
The Cypress CY14B104LA/CY14B104NA is a fast static RAM (SRAM), with a non-volatile element in each memory cell. The memory is organized as 512K...
