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CY14B104LA - 4-Mbit (512K x 8/256K x 16) nvSRAM

CY14B104LA Product details

Description

STORE to QuantumTrap non-volatile elements initiated by software, device pin, or AutoStore on power-down RECALL to SRAM initiated by software or power-up Infinite read, write, and recall cycles 1 million STORE cycles to QuantumTrap 20 year data retention Single 3

Features

  • 20 ns, 25 ns, and 45 ns access times * Internally organized as 512K × 8 (CY14B104LA) or 256K × 16.
  • (CY14B104NA).
  • Packages * 44-/54-pin thin small outline package (TSOP) Type II * 48-ball fine-pitch ball grid array (FBGA).
  • Pb-free and restriction of hazardous substances (R.

📥 Download Datasheet

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Datasheet Details

Part number
CY14B104LA
Manufacturer
Cypress Semiconductor
File Size
619.78 KB
Datasheet
CY14B104LA-CypressSemiconductor.pdf
Description
4-Mbit (512K x 8/256K x 16) nvSRAM

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📌 All Tags

4-Mbit 512K 256K nvSRAM Cypress Semiconductor
Cypress Semiconductor CY14B104LA-like datasheet

CY14B104LA Stock/Price