CY14B104NA Overview
■ STORE to QuantumTrap non-volatile elements initiated by software, device pin, or AutoStore on power-down ■ RECALL to SRAM initiated by software or power-up ■ Infinite read, write, and recall cycles ■ 1 million STORE cycles to QuantumTrap ■ 20 year data retention ■ Single 3 V +20, –10 operation ■ Industrial temperature The Cypress CY14B104LA/CY14B104NA is a fast static RAM (SRAM), with a non-volatile element in each memory cell. The memory is organized as 512K by
CY14B104NA Key Features
- 20 ns, 25 ns, and 45 ns access times
- Internally organized as 512K × 8 (CY14B104LA) or 256K × 16
- Packages
- 44-/54-pin thin small outline package (TSOP) Type II
- 48-ball fine-pitch ball grid array (FBGA)
- Pb-free and restriction of hazardous substances (RoHS) pliant
- Hands off automatic STORE on power-down with only a small capacitor
- STORE to QuantumTrap non-volatile elements initiated by software, device pin, or AutoStore on power-down
- RECALL to SRAM initiated by software or power-up
- Infinite read, write, and recall cycles