CY14B104NA, CY14B104LA Datasheet - Cypress Semiconductor

CY14B104NA 4-Mbit (512K x 8/256K x 16) nvSRAM

* STORE to QuantumTrap non-volatile elements initiated by software, device pin, or AutoStore on power-down * RECALL to SRAM initiated by software or power-up * Infinite read, write, and recall cycles * 1 million STORE cycles to QuantumTrap * 20 year data retention * Single 3.

CY14B104NA Features

* 20 ns, 25 ns, and 45 ns access times

* Internally organized as 512K × 8 (CY14B104LA) or 256K × 16 (CY14B104NA)

* Packages

* 44-/54-pin thin small outline package (TSOP) Type II

* 48-ball fine-pitch ball grid array (FBGA)

* Pb-free and restriction of hazardous substances (R

CY14B104LA-CypressSemiconductor.pdf

CY14B104NA Datasheet Preview — This datasheet PDF includes multiple part numbers: CY14B104NA, CY14B104LA. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

CY14B104NA, CY14B104LA

Manufacturer:

Cypress Semiconductor

File Size:

619.78 KB

Description:

4-mbit (512k x 8/256k x 16) nvsram.

Note:

This datasheet PDF includes multiple part numbers: CY14B104NA, CY14B104LA.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

CY14B104N 4-Mbit (512K x 8/256K x 16) nvSRAM (Cypress Semiconductor)

CY14B104K 4-Mbit (512 K x 8/256 K x 16) nvSRAM (Cypress Semiconductor)

CY14B104L 4-Mbit (512K x 8/256K x 16) nvSRAM (Cypress Semiconductor)

CY14B104LA 4-Mbit (512K x 8/256K x 16) nvSRAM (Cypress Semiconductor)

CY14B104M 4-Mbit (512 K x 8/256 K x 16) nvSRAM (Cypress Semiconductor)

CY14B101I 1-Mbit (128 K x 8) Serial (I2C) nvSRAM (Cypress Semiconductor)

CY14B101J 1-Mbit (128 K X 8) Serial (I2C) nvSRAM (Cypress Semiconductor)

CY14B101K 1 Mbit (128K x 8) nvSRAM (Cypress Semiconductor)

TAGS

CY14B104NA CY14B104LA 4-Mbit 512K 256K nvSRAM Cypress Semiconductor

CY14B104NA Distributor