CY15B102Q Datasheet | Cypress

Features - 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256 K × 8 - High-endurance 10 trillion (1013) read/writes - 121-year data retention (See the Data Retention and Endurance table) - No Delay™ writes - Advanced high-reliability ferroelectric process - Very fast serial peripheral interface (SPI) - Up to 25 MHz frequency - Direct hardware replacement for serial flash and EEPROM - Supports SPI mode 0 (0, 0) and mode 3 (1, 1) - Sophisticated write protection scheme - Hardware protection using the Write Protect (WP) pin - Software protection using Write Disable instruction - Software block protection for 1/4, 1/2, or entire array - Device ID - Manufacturer ID and Product ID - Low power consumption - 5 m A active current at 25 MHz - 750 A standby current - 20 A sleep mode current - Low-voltage operation: VDD = 2.0 V to 3.6 V - Automotive-E temperature: - 40 C to +125 C - 8-pin small outline integrated circuit (SOIC) package - AEC Q100 Grade 1 pliant - Restriction of hazardous substances (Ro HS) pliant Functional Overview The CY15B102Q is a 2-Mbit nonvolatile memory employing an advanced ferroelectric process. F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the plexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories. Unlike serial flash and EEPROM, the CY15B102Q performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can mence without the need for data polling. In addition, the product offers substantial write endurance pared with other nonvolatile memories. The CY15B102Q is capable of supporting 1013 read/write cycles, or 10 million times more write cycles than EEPROM. These capabilities make the CY15B102Q ideal for nonvolatile memory applications...