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CY27H512 - 64K x 8 High Speed CMOS EPROM

General Description

T5K2PTcColfooo18pLhhYbwrm2ĆaeeCyp2K1qsttbiC70eheunCiH0sne,e,CY.d%e5pdMIe6da21taev0n7r2wicOvi0esHdckiiĆpciaeStasm5ehvrsg12oaaEi4eto28lgivo0slPfĆara.ĆfpDbaiRiMebWslimearnlIOeHbPaiemhn,iMlrzneiTdaahgp3oisbShiin2eegnowiOĆdlĆrdhdriepfwutPgĆeowydipasĆinn.rnIteipnmsrtdraihiyfLztoapcĆoyeUsnCkwardtcsacmaeCVt

Key Features

  • D CMOS for optimum speed/power D High speed Ċ tAA = 25 ns max. (commercial) Ċ tAA = 35 ns max. (military) D Low power Ċ 275 mW max. Ċ Less than 85 mW when deselected D ByteĆwide memory organization D 100% reprogrammable in the windowed package D EPROM technology D Capable of withstanding >2001V static discharge D Available in Ċ 32Ćpin PLCC Ċ 28Ćpin TSOPĆI Ċ 28Ćpin, 600Ćmil plastic or Ċ hermetic DIP 32Ćpin hermetic LCC.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Features D CMOS for optimum speed/power D High speed Ċ tAA = 25 ns max. (commercial) Ċ tAA = 35 ns max. (military) D Low power Ċ 275 mW max. Ċ Less than 85 mW when deselected D ByteĆwide memory organization D 100% reprogrammable in the windowed package D EPROM technology D Capable of withstanding >2001V static discharge D Available in Ċ 32Ćpin PLCC Ċ 28Ćpin TSOPĆI Ċ 28Ćpin, 600Ćmil plastic or Ċ hermetic DIP 32Ćpin hermetic LCC PRELIMINARY CY27H512 64K x 8 HighĆSpeeEdPCRMOOMS Functional Description T5K2PTcColfooo18pLhhYbwrm2ĆaeeCyp2K1qsttbiC70eheunCiH0sne,e,CY.d%e5pdMIe6da21taev0n7r2wicOvi0esHdckiiĆpciaeStasm5ehvrsg12oaaEi4eto28lgivo0slPfĆara.ĆfpDbaiRiMebWslimearnlIOeHbPaiemhn,iMlrzneiTdaahgp3oisbShiin2eegnowiOĆdlĆrdhdriepfwutPgĆeowydipasĆinn.