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Cypress Semiconductor Electronic Components Datasheet

CY62137CV18 Datasheet

128K x 16 Static RAM

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CY62137CV18 pdf
CY62137CV18 MoBL2™
Features
High Speed
55 ns and 70 ns availability
Low voltage range:
CY62137CV18: 1.65V1.95V
Pin Compatible w/ CY62137V18/BV18
Ultra-low active power
Typical Active Current: 0.5 mA @ f = 1 MHz
Typical Active Current: 1.5 mA @ f = fmax (70 ns
speed)
Low standby power
Easy memory expansion with CE and OE features
Automatic power-down when deselected
CMOS for optimum speed/power
Functional Description
The CY62137CV18 is a high-performance CMOS static RAM
organized as 128K words by 16 bits. This device features ad-
vanced circuit design to provide ultra-low active current. This
is ideal for providing More Battery Life(MoBL) in portable
applications such as cellular telephones. The device also has
an automatic power-down feature that significantly reduces
Logic Block Diagram
DATA IN DRIVERS
A10
A9
A8
A7
A6 128K x 16
A5 RAM Array
A4 2048 X 1024
A3
A2
A1
A0
128K x 16 Static RAM
power consumption by 99% when addresses are not toggling.
The device can also be put into standby mode when deselect-
ed (CE HIGH or both BLE and BHE are HIGH). The input/out-
put pins (I/O0 through I/O15) are placed in a high-impedance
state when: deselected (CE HIGH), outputs are disabled (OE
HIGH), both Byte High Enable and Byte Low Enable are dis-
abled (BHE, BLE HIGH), or during a write operation (CE LOW,
and WE LOW).
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is
written into the location specified on the address pins (A0
through A16). If Byte High Enable (BHE) is LOW, then data
from I/O pins (I/O8 through I/O15) is written into the location
specified on the address pins (A0 through A16).
Reading from the device is accomplished by taking Chip En-
able (CE) and Output Enable (OE) LOW while forcing the Write
Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then
data from the memory location specified by the address pins
will appear on I/O0 to I/O7. If Byte High Enable (BHE) is LOW,
then data from memory will appear on I/O8 to I/O15. See the
Truth Table at the back of this data sheet for a complete de-
scription of read and write modes.
The CY62137CV18 is available in a 48-ball FBGA package.
I/O0I/O7
I/O8I/O15
COLUMN DECODER
Power -Down
Circuit
CE
BHE
BLE
MoBL, MoBL2, and More Battery Life are trademarks of Cypress Semiconductor Corporation.
BHE
WE
CE
OE
BLE
Cypress Semiconductor Corporation • 3901 North First Street • San Jose • CA 95134 • 408-943-2600
Document #: 38-05017 Rev. *B
Revised October 31, 2001


Cypress Semiconductor Electronic Components Datasheet

CY62137CV18 Datasheet

128K x 16 Static RAM

No Preview Available !

CY62137CV18 pdf
CY62137CV18 MoBL2
Pin Configuration[1, 2]
FBGA
Top View
12 34 56
BLE OE A0 A1 A2 NC
I/O8 BHE A3 A4 CE I/O0
I/O9 I/O10 A5 A6 I/O1 I/O2
VSS I/O11 NC A7 I/O3 Vccq
VCC I/O12 DNU A16 I/O4 Vssq
I/O14 I/O13 A14 A15 I/O5 I/O6
I/O15 NC A12 A13 WE I/O7
NC A8 A9 A10 A11 NC
A
B
C
D
E
F
G
H
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ..................................... −65°C to +150°C
Ambient Temperature with
Power Applied.................................................. −55°C to +125°C
Supply Voltage to Ground Potential .................−0.2V to +2.4V
Operating Range
Device
CY62137CV18
Range
Industrial
DC Voltage Applied to Outputs
in High Z State[3] ....................................... −0.2V to VCC + 0.2V
DC Input Voltage[3].................................... −0.2V to VCC + 0.2V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage .......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current.................................................... >200 mA
Ambient Temperature
40°C to +85°C
VCC
1.65V to 1.95V
Product Portfolio
Product
CY62137CV18
VCC(min.)
1.65V
VCC Range
VCC(typ.)[4] VCC(max.)
1.80V
1.95V
Speed
55 ns
70 ns
Power Dissipation (Industrial)
Operating (ICC)
f = 1 MHz
Typ.[4] Max.
f = fmax
Typ.[4] Max.
Standby (ISB2)
Typ.[4] Max.
0.5 mA 2 mA 2 mA 7 mA
1 µA 8 µA
0.5 mA 2 mA 1.5 mA 6 mA
Notes:
1. NC pins are not connected to the die.
2. E3 (DNU) can be left as NC or VSS to ensure proper application.
3. VIL(min) = 2.0V for pulse durations less than 20 ns.
4. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25°C.
Document #: 38-05017 Rev. *B
Page 2 of 11


Part Number CY62137CV18
Description 128K x 16 Static RAM
Maker Cypress Semiconductor
Total Page 11 Pages
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