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CY621472GN

Manufacturer: Cypress (now Infineon)

This datasheet includes multiple variants, all published together in a single manufacturer document.

CY621472GN datasheet preview

Datasheet Details

Part number CY621472GN
Datasheet CY621472GN CY62147GN Datasheet (PDF)
File Size 291.96 KB
Manufacturer Cypress (now Infineon)
Description 4-Mbit (256K words x 16 bit) Static RAM
CY621472GN page 2 CY621472GN page 3

CY621472GN Overview

CY62147GN and CY621472GN are high-performance CMOS low-power (MoBL) SRAM devices organized as 256K Words by 16-bits. Both devices are offered in single and dual chip enable options and in multiple pin configurations. Devices with a single chip enable input are accessed by asserting the chip enable (CE) input LOW.

CY621472GN Key Features

  • High speed: 45 ns/55 ns
  • Ultra-low standby power
  • Typical standby current: 3.5 A
  • Maximum standby current: 8.7 A
  • Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V
  • 1.0-V data retention
  • TTL-patible inputs and outputs
  • Pb-free 48-ball VFBGA and 44-pin TSOP II packages
Cypress (now Infineon) logo - Manufacturer

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Part Number Description
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CY62147CV25 256K x 16 Static RAM
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CY62147CV33 256K x 16 Static RAM
CY62147DV18 4-Mb (256K x 16) Static RAM
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CY621472GN Distributor

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