CY621472GN, CY62147GN Datasheet - Cypress Semiconductor

CY621472GN 4-Mbit (256K words x 16 bit) Static RAM

CY62147GN and CY621472GN are high-performance CMOS low-power (MoBL) SRAM devices organized as 256K Words by 16-bits. Both devices are offered in single and dual chip enable options and in multiple pin configurations. Devices with a single chip enable input are accessed by asserting the chip enable (.

CY621472GN Features

* High speed: 45 ns/55 ns

* Ultra-low standby power

* Typical standby current: 3.5 A

* Maximum standby current: 8.7 A

* Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V

* 1.0-V data retention

* TTL-compatible inputs and outputs

* Pb-free 48-ball V

CY62147GN-CypressSemiconductor.pdf

CY621472GN Datasheet Preview — This datasheet PDF includes multiple part numbers: CY621472GN, CY62147GN. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

CY621472GN, CY62147GN

Manufacturer:

Cypress Semiconductor

File Size:

291.96 KB

Description:

4-mbit (256k words x 16 bit) static ram.

Note:

This datasheet PDF includes multiple part numbers: CY621472GN, CY62147GN.
Please refer to the document for exact specifications by model.

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TAGS

CY621472GN CY62147GN 4-Mbit 256K words bit Static RAM Cypress Semiconductor

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