CY621472E30 Datasheet | Cypress

CY621472E30 Mo BL® 4-Mbit (256 K × 16) Static RAM 4-Mbit (256 K × 16) Static RAM Features - Very high speed: 45 ns - Temperature range - Industrial: - 40 °C to +85 °C - Wide voltage range: 2.20 V to 3.60 V - Ultra low standby power - Typical standby current: 1 A - Maximum standby current: 7 A (Industrial) - Ultra low active power - Typical active current: 2 m A at f = 1 MHz - Easy memory expansion with CE1, CE2, and OE Features - Automatic power down when deselected - plementary metal oxide semiconductor (CMOS) for optimum speed and power - Available in Pb-free 44-pin thin small outline package (TSOP) II package - Byte power down feature Functional Description The CY621472E30 is a high performance CMOS static RAM (SRAM) organized as 256K words by 16 bits. This device Features advanced circuit design to provide ultra low active current. It is ideal for providing More Battery Life™ (Mo BL) in portable applications such as cellular...