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CY621472G Datasheet 4-mbit (256k Words X 16 Bit) Static Ram

Manufacturer: Cypress (now Infineon)

Overview: CY62147G/CY621472G CY62147GE MoBL® 4-Mbit (256K words × 16-bit) Static RAM with Error-Correcting Code (ECC) 4-Mbit (256K words × 16-bit) Static RAM with Error-Correcting Code.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

CY62147G and CY62147GE are high-performance CMOS low-power (MoBL) SRAM devices with embedded ECC.

Both devices are offered in single and dual chip enable options and in multiple pin configurations.

The CY62147GE device includes an ERR pin that signals an error-detection and correction event during a read cycle.

Key Features

  • High speed: 45 ns/55 ns.
  • Ultra-low standby power.
  • Typical standby current: 3.5 A.
  • Maximum standby current: 8.7 A.
  • Embedded ECC for single-bit error correction[1, 2].
  • Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V.
  • 1.0-V data retention.
  • TTL-compatible inputs and outputs.
  • Error indication (ERR) pin to indicate 1-bit error detection and correction.
  • Pb-free 48-ball VFBGA and 44-pin TSOP II packages Functional.

More Datasheets from Cypress (now Infineon)

Part Number Description
CY621472G30 4-Mbit (256K words x 16 bit) Static RAM
CY621472GN 4-Mbit (256K words x 16 bit) Static RAM
CY621472E30 4-Mbit (256 K x 16) Static RAM
CY62147CV18 256K x 16 Static RAM
CY62147CV25 256K x 16 Static RAM
CY62147CV30 256K x 16 Static RAM
CY62147CV33 256K x 16 Static RAM
CY62147DV18 4-Mb (256K x 16) Static RAM
CY62147DV30 4-Mbit (256K x 16) Static RAM
CY62147EV18 4-Mbit (256K x 16) Static RAM

CY621472G Distributor