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CY621472GN - 4-Mbit (256K words x 16 bit) Static RAM

Download the CY621472GN datasheet PDF. This datasheet also covers the CY62147GN variant, as both devices belong to the same 4-mbit (256k words x 16 bit) static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

CY62147GN and CY621472GN are high-performance CMOS low-power (MoBL) SRAM devices organized as 256K Words by 16-bits.

Both devices are offered in single and dual chip enable options and in multiple pin configurations.

Key Features

  • High speed: 45 ns/55 ns.
  • Ultra-low standby power.
  • Typical standby current: 3.5 A.
  • Maximum standby current: 8.7 A.
  • Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V.
  • 1.0-V data retention.
  • TTL-compatible inputs and outputs.
  • Pb-free 48-ball VFBGA and 44-pin TSOP II packages Functional.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY62147GN-CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
CY62146DV30 4M Bit Static RAM Cypress
CY62146G 4-Mbit (256K words x 16 bit) Static RAM Cypress
CY62146G-MoBL 4-Mbit (256K words x 16 bit) Static RAM Cypress
CY62146GE 4-Mbit (256K words x 16 bit) Static RAM Cypress
CY62146GESL 4-Mbit (256K words x 16 bit) Static RAM Cypress

Other Datasheets by Cypress (now Infineon)

Part Number Description
CY621472G 4-Mbit (256K words x 16 bit) Static RAM
CY621472G30 4-Mbit (256K words x 16 bit) Static RAM
CY621472E30 4-Mbit (256 K x 16) Static RAM
CY62147CV18 256K x 16 Static RAM
CY62147CV25 256K x 16 Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CY62147GN/CY621472GN MoBL® 4-Mbit (256K words × 16 bit) Static RAM 4-Mbit (256K words × 16 bit) Static RAM Features ■ High speed: 45 ns/55 ns ■ Ultra-low standby power ❐ Typical standby current: 3.5 A ❐ Maximum standby current: 8.7 A ■ Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V ■ 1.0-V data retention ■ TTL-compatible inputs and outputs ■ Pb-free 48-ball VFBGA and 44-pin TSOP II packages Functional Description CY62147GN and CY621472GN are high-performance CMOS low-power (MoBL) SRAM devices organized as 256K Words by 16-bits. Both devices are offered in single and dual chip enable options and in multiple pin configurations. Devices with a single chip enable input are accessed by asserting the chip enable (CE) input LOW.