CY62157H 8-Mbit (512K words x 16 bit) Static RAM

Cypress Semiconductor

Description

CY62157H MoBL® 8-Mbit (512K words × 16-bit) Static RAM with Error-Correcting Code (ECC) 8-Mbit (512K words × 16-bit) Static RAM with Error-Correcting.
CY62157H is a high-performance CMOS low-power (MoBL) SRAM device with Embedded Error-Correcting Code.

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Datasheet Specifications

Part number: CY62157H
Manufacturer: Cypress Semiconductor
File Size: 373.12 KB
Datasheet: CY62157H-CypressSemiconductor.pdf
Description: 8-Mbit (512K words x 16 bit) Static RAM

Features

* Ultra-low standby current
* Typical standby current: 5.5A
* Maximum standby current: 16 A
* High speed: 45 ns
* Voltage range: 2.2 V to 3.6 V
* Embedded Error-Correcting Code (ECC) for single-bit error correction
* 1.0 V data retention
* Transistor-transistor log

CY62157H Distributors

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CY62157H 8-Mbit 512K words bit Static RAM Cypress Semiconductor

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