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CY62167EV18 MoBL®
16-Mbit (1 M × 16) Static RAM
16-Mbit (1 M × 16) Static RAM
Features
■ Very high speed: 55 ns
■ Wide voltage range: 1.65 V to 2.25 V
■ Ultra low standby power ❐ Typical standby current: 1.5 A ❐ Maximum standby current: 12 A
■ Ultra low active power ❐ Typical active current: 2.2 mA at f = 1 MHz
■ Easy memory expansion with CE1, CE2, and OE features ■ Automatic power down when deselected
■ CMOS for optimum speed and power
■ Offered in Pb-free 48-ball very fine ball grid array (VFBGA) packages
Functional Description
The CY62167EV18 is a high performance CMOS static RAM organized as 1M words by 16 bits. This device features advanced circuit design to provide ultra low active current.
CY62167EV18 Datasheet
