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CY62177DV20 - 32-Mbit (2M x 16) Static RAM

General Description

of read and write modes.

For best practice recommendations, refer to the Cypress application note AN1064, SRAM System Guidelines.

The CY62177DV20 is a high performance CMOS static RAM organized as 2M words by 16 bits.

Key Features

  • Very high speed: 70 ns Wide voltage range: 1.7V.
  • 2.2V Ultra low active power.
  • Typical active current: 2 mA at f = 1 MHz.
  • Typical active current: 12 mA at f = fMAX Ultra low standby power Easy memory expansion with CE1, CE2, and OE features Automatic power down when deselected CMOS for optimum speed and power Offered in 48-ball VFBGA package by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CY62177DV20 MoBL2™ 32-Mbit (2M x 16) Static RAM Features ■ ■ ■ Very high speed: 70 ns Wide voltage range: 1.7V – 2.2V Ultra low active power ❐ Typical active current: 2 mA at f = 1 MHz ❐ Typical active current: 12 mA at f = fMAX Ultra low standby power Easy memory expansion with CE1, CE2, and OE features Automatic power down when deselected CMOS for optimum speed and power Offered in 48-ball VFBGA package by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH).