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CY62177DV30 - 32-Mbit (2M x 16) Static RAM

Description

of read and write modes.

The CY62177DV30 is a high-performance CMOS static RAM organized as 2M words by 16 bits.

Features

  • Very high speed: 55 ns Wide voltage range: 2.20 V.
  • 3.60 V Ultra-low active power.
  • Typical active current: 2 mA @ f = 1 MHz.
  • Typical active current: 15 mA @ f = fmax Ultra low standby power Easy memory expansion with CE1, CE2 and OE features Automatic power-down when deselected Complementary metal oxide semiconductor (CMOS) for optimum speed/power Packages offered in a 48-ball fine ball grid array (FBGA).

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Full PDF Text Transcription

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CY62177DV30 MoBL® 32-Mbit (2M x 16) Static RAM Features ■ ■ ■ Very high speed: 55 ns Wide voltage range: 2.20 V–3.60 V Ultra-low active power ❐ Typical active current: 2 mA @ f = 1 MHz ❐ Typical active current: 15 mA @ f = fmax Ultra low standby power Easy memory expansion with CE1, CE2 and OE features Automatic power-down when deselected Complementary metal oxide semiconductor (CMOS) for optimum speed/power Packages offered in a 48-ball fine ball grid array (FBGA) ■ ■ ■ ■ ■ applications such as cellular telephones.The device also has an automatic power-down feature that significantly reduces power consumption. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH).
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