CY62177ESL Description
The CY62177ESL is a high performance CMOS static RAM organized as 2 M words by 16 bits and 4 M words by 8 bits.
CY62177ESL Key Features
- Thin small outline package-I (TSOP-I) configurable as 2 M × 16 or as 4 M × 8 static RAM (SRAM)
- High-speed up to 55 ns
- Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V
- Ultra low standby power
- Typical standby current: 3 µA
- Maximum standby current: 25 µA
- Ultra low active power
- Typical active current: 4.5 mA at f = 1 MHz
- Easy memory expansion with CE1, CE2, and OE Features
- Automatic power-down when deselected