CY62177ESL Datasheet | Cypress

CY62177ESL Mo BL® 32-Mbit (2 M × 16/4 M × 8) Static RAM 32-Mbit (2 M × 16/4 M × 8) Static RAM Features - Thin small outline package-I (TSOP-I) configurable as 2 M × 16 or as 4 M × 8 static RAM (SRAM) - High-speed up to 55 ns - Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V - Ultra low standby power - Typical standby current: 3 µA - Maximum standby current: 25 µA - Ultra low active power - Typical active current: 4.5 m A at f = 1 MHz - Easy memory expansion with CE1, CE2, and OE Features - Automatic power-down when deselected - plementary metal oxide semiconductor (CMOS) for optimum speed and power - Available in Pb-free 48-ball TSOP-I package Functional Description The CY62177ESL is a high performance CMOS static RAM organized as 2 M words by 16 bits and 4 M words by 8 bits. This device Features advanced circuit design to provide ultra low active current. It is ideal for providing More Battery Life (Mo BL®) in portable applications such...