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CY7C1250KV18 - 36-Mbit DDR II+ SRAM Two-Word Burst Architecture

Download the CY7C1250KV18 datasheet PDF (CY7C1248KV18 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 36-mbit ddr ii+ sram two-word burst architecture.

Features

  • 36-Mbit density (2M × 18, 1M × 36).
  • 450 MHz clock for high bandwidth.
  • Two-word burst for reducing address bus frequency.
  • Double data rate (DDR) interfaces (data transferred at 900 MHz) at 450 MHz.
  • Available in 2.0 clock cycle latency.
  • Two input clocks (K and K) for precise DDR timing.
  • SRAM uses rising edges only.
  • Echo clocks (CQ and CQ) simplify data capture in high speed systems.
  • Data valid pin (QVLD) to indicate valid data on the output.
  • Synch.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY7C1248KV18-CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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CY7C1248KV18/CY7C1250KV18 36-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) 36-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) Features ■ 36-Mbit density (2M × 18, 1M × 36) ■ 450 MHz clock for high bandwidth ■ Two-word burst for reducing address bus frequency ■ Double data rate (DDR) interfaces (data transferred at 900 MHz) at 450 MHz ■ Available in 2.0 clock cycle latency ■ Two input clocks (K and K) for precise DDR timing ❐ SRAM uses rising edges only ■ Echo clocks (CQ and CQ) simplify data capture in high speed systems ■ Data valid pin (QVLD) to indicate valid data on the output ■ Synchronous internally self-timed writes ■ DDR II+ operates with 2.
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