CY7C1419AV18 Overview
CY7C1417AV18 CY7C1428AV18 CY7C1419AV18 CY7C1421AV18 36-Mbit DDR-II SRAM 4-Word Burst Architecture.
CY7C1419AV18 Key Features
- 300-MHz clock for high bandwidth
- 4-Word burst for reducing address bus frequency
- Double Data Rate (DDR) interfaces
- Two input clocks (K and K) for precise DDR timing
- SRAM uses rising edges only
- Two input clocks for output data (C and C) to minimize
- Synchronous internally self-timed writes
- 1.8V core power supply with HSTL inputs and outputs
- Variable drive HSTL output buffers
- Expanded HSTL output voltage (1.4V-VDD)