D D D D D D D High speed Ċ 15 ns CMOS for optimum speed/power Low active power Ċ 990 mW Low standby power Ċ 195 mW Easy memory expansion with CE and OE features TTLĆcomp.

output pins (I/O0 through I/O7) is written intothememorylocationaddressedbythe address present on the address pins (A0 through A14). Reading the device is acĆ complishedbyselectingthedeviceandenĆ abling the outputs, CE and OE active LOW, while WE re.

CY7C190

CY7C1910BV18

CY7C1911BV18

CY7C1911CV18

CY7C1911JV18

CY7C1911KV18

CY7C1916BV18

CY7C1916CV18

CY7C1916JV18

CY7C1916KV18

CY7C1917BV18

CY7C191xBV18

CY7C194