Datasheet4U Logo Datasheet4U.com

CY7C2565KV18 - 72-Mbit QDR-II SRAM 4-Word Burst Architecture

Download the CY7C2565KV18 datasheet PDF (CY7C2561KV18 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 72-mbit qdr-ii sram 4-word burst architecture.

Description

The CY7C2561KV18, CY7C2576KV18, CY7C2563KV18, and CY7C2565KV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR-II+ architecture.

Similar to QDR-II architecture, QDR-II+ architecture consists of two separate ports: the read port and the write port to access the memory array.

Features

  • Configurations With Read Cycle Latency of 2.5 cycles: CY7C2561KV18.
  • 8M x 8 CY7C2576KV18.
  • 8M x 9 CY7C2563KV18.
  • 4M x 18 CY7C2565KV18.
  • 2M x 36 Separate independent read and write data ports.
  • Supports concurrent transactions 550 MHz clock for high bandwidth 4-word burst for reducing address bus frequency Double Data Rate (DDR) interfaces on both read and write ports (data transferred at 1100 MHz) at 550 MHz Available in 2.5 clock cycle latency Two inp.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY7C2561KV18_CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.
Other Datasheets by Cypress Semiconductor

Full PDF Text Transcription

Click to expand full text
www.DataSheet.co.kr PRELIMINARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 72-Mbit QDR™-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) with ODT Features ■ Configurations With Read Cycle Latency of 2.5 cycles: CY7C2561KV18 – 8M x 8 CY7C2576KV18 – 8M x 9 CY7C2563KV18 – 4M x 18 CY7C2565KV18 – 2M x 36 Separate independent read and write data ports ❐ Supports concurrent transactions 550 MHz clock for high bandwidth 4-word burst for reducing address bus frequency Double Data Rate (DDR) interfaces on both read and write ports (data transferred at 1100 MHz) at 550 MHz Available in 2.
Published: |