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CY7C25702KV18 - 72-Mbit DDR II+ SRAM Two-Word Burst Architecture

Download the CY7C25702KV18 datasheet PDF (CY7C25682KV18 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 72-mbit ddr ii+ sram two-word burst architecture.

Features

  • 72-Mbit density (4M × 18, 2M × 36).
  • 550 MHz clock for high bandwidth.
  • Two-word burst for reducing address bus frequency.
  • Double data rate (DDR) interfaces (data transferred at 1100 MHz) at 550 MHz.
  • Available in 2.5 clock cycle latency.
  • Two input clocks (K and K) for precise DDR timing.
  • SRAM uses rising edges only.
  • Echo Clocks (CQ and CQ) simplify data capture in high speed systems.
  • Data valid pin (QVLD) to indicate valid data on the output.
  • On-d.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY7C25682KV18-CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Cypress Semiconductor
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Full PDF Text Transcription

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CY7C25682KV18 CY7C25702KV18 72-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT 72-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT Features ■ 72-Mbit density (4M × 18, 2M × 36) ■ 550 MHz clock for high bandwidth ■ Two-word burst for reducing address bus frequency ■ Double data rate (DDR) interfaces (data transferred at 1100 MHz) at 550 MHz ■ Available in 2.
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