CY7C4261V Overview
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CY7C4261V Key Features
- 3.3 V operation for low-power consumption and easy integration into low-voltage systems
- High-speed, low-power, first-in first-out (FIFO) memories
- 16K × 9 (CY7C4261V)
- 64K × 9 (CY7C4281V)
- 128K × 9 (CY7C4291V)
- 0.35-micron CMOS for optimum speed or power
- High-speed 100-MHz operation (10-ns read/write cycle times)
- Low power
- ICC = 25 mA
- ISB = 4 mA