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Cypress Semiconductor Electronic Components Datasheet

S70GL02GT Datasheet

2-Gbit (256-Mbyte) 3.0V Flash Memory

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S70GL02GT
2-Gbit (256-Mbyte)
3.0V Flash Memory
General Description
The Cypress S70GL02GT 2-Gigabit MirrorBit® Flash memory device is fabricated on 45-nm MirrorBit® Eclipseprocess technology.
This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer
that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time
than standard single byte/word programming algorithms. This makes the device an ideal product for today’s embedded applications
that require higher density, better performance and lower power consumption.
This document contains information for the S70GL02GT device, which is a dual-die stack of two S29GL01GT die. For detailed
specifications, please refer to the discrete die data sheet:
Document
S29GL01GT, S29GL512T Data Sheet
Cypress Document Number
002-00247
Distinctive Characteristics
CMOS 3.0 Volt Core with Versatile I/O™
Two 1024 Megabit (S29GL01GT) in a single 64-ball Fortified-
BGA package (see S29GL01GT datasheet for full
specifications)
45 nm MirrorBit Eclipse process technology
Single supply (VCC) for read / program / erase (2.7V to 3.6V)
Versatile I/O Feature
– Wide I/O voltage (VIO): 1.65V to VCC
x8 and x16 data bus
16-word/32-byte page read buffer
512-byte Programming Buffer
– Programming in Page multiples, up to a maximum of
512 bytes
Sector Erase
– Uniform 128-kbytes sectors
– S70GL02GT: two thousand forty-eight sectors
Suspend and Resume commands for Program and Erase
operations
Status Register, Data Polling, and Ready/Busy pin methods
to determine device status
Advanced Sector Protection (ASP)
– Volatile and non-volatile protection methods for each
sector
Separate 1024-bye One Time Program (OTP) array with two
lockable regions
– Available in each device Support for CFI (Common Flash
Interface)
WP# input
– Protects the last sector of the device, regardless of sector
protection settings
Temperature Range / Grade
– Industrial (–40°C to +85°C)
– Industrial Plus (–40°C to +105°C)
– Automotive, AEC-Q100 Grade 3 (-40°C to +85°C)
– Automotive, AEC-Q100 Grade 2 (-40°C to +105°C)
100,000 Program-Erase cycles
20-year data retention
Packaging Options
– 64-ball LSH Fortified BGA, 13 mm x 11 mm
Performance Characteristics
Max. Read Access Times (ns) (Note 1)
Parameter
Random Access Time (tACC)
Page Access Time (tPACC)
CE# Access Time (tCE)
OE# Access Time (tOE)
110
20
110
25
Notes
1. Access times are dependent on VIO operating ranges. See Ordering Information on page 4 for further details.
2. Contact a sales representative for availability.
2 Gb
120
30
120
35
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 002-13915 Rev. *A
• San Jose, CA 95134-1709 • 408-943-2600
Revised October 21, 2016


Cypress Semiconductor Electronic Components Datasheet

S70GL02GT Datasheet

2-Gbit (256-Mbyte) 3.0V Flash Memory

No Preview Available !

Operation
Buffer Programming (512 bytes)
Sector Erase (128 kbytes)
Operation
Active Read at 5 MHz, 30 pF
Program
Erase
Standby
Typical Program and Erase Rates
40°C to +85°C
1.114 MB/s
245 kB/s
Maximum Current Consumption
40°C to +85°C
60 mA
100 mA
100 mA
200 µA
S70GL02GT
40°C to +105°C
1.14 MB/s
245 kB/s
40°C to +105°C
60 mA
100 mA
100 mA
400 µA
Document Number: 002-13915 Rev. *A
Page 2 of 20


Part Number S70GL02GT
Description 2-Gbit (256-Mbyte) 3.0V Flash Memory
Maker Cypress Semiconductor
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S70GL02GT Datasheet PDF






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