BTB1412J3 - Low Vcesat PNP Epitaxial Planar Transistor

Product Overview

Cystech Electonics

Part number	BTB1412J3
Manufacturer	Cystech Electonics
File Size	212.77 KB
Description	Low Vcesat PNP Epitaxial Planar Transistor
Datasheet	BTB1412J3 Datasheet
Additional preview pages of the BTB1412J3 datasheet.

Low VCE(sat), VCE(sat)=-0.6 V (typical), at IC / IB = -4A / -0.1A.
Excellent DC current gain characteristics.
Complementary to BTD2118J3 Symbol BTB1412J3 Outline TO-252 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note :.
1. Single Pulse Pw=10ms Symbol VCBO VCEO VEBO IC(DC) IC(Pu.

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Published: Jun 15, 2009 |