BTB1426A3 - Low VCE(SAT) PNP Epitaxial Planar Transistor

Product Overview

Cystech Electonics

Datasheet Details

Part number	BTB1426A3
Manufacturer	Cystech Electonics
File Size	185.59 KB
Description	Low VCE(SAT) PNP Epitaxial Planar Transistor
Datasheet	BTB1426A3 Datasheet
Additional preview pages of the BTB1426A3 datasheet.

Product details

Description

The BTB1426A3 is designed especially for use in strobo flash and medium power amplifier applications. High DC current gain and excellent hFE linearity. Low Saturation Voltage VCE(sat)=-0.5V(max)(IC=-2A, IB=-100mA).

Features

Symbol BTB1426A3 Outline TO-92 B：Base C：Collector E：Emitter ECB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulsed)(Note 1) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Note : Single pulse, Pw≤10ms, Duty Cycle≤2%. Symbol VCBO VCEO VEBO IC ICP Pd RθJA Tj Tstg Limits -20 -20 -6 -3 -5 (Note ) 750 167 150 -55~+150 Unit V V V A mW.

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Published: Jun 15, 2009 |