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BTN5551A3 Datasheet General Purpose NPN Epitaxial Planar Transistor

Manufacturer: Cystech Electonics

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Datasheet Details

Part number BTN5551A3
Manufacturer Cystech Electonics
File Size 257.06 KB
Description General Purpose NPN Epitaxial Planar Transistor
Download BTN5551A3 Download (PDF)

General Description

The BTN5551A3 is designed for general purpose applications requiring high breakdown voltage.

Overview

CYStech Electronics Corp.

General Purpose NPN Epitaxial Planar Transistor BTN5551A3 Spec.

No.

Key Features

  • High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA).
  • Complement to BTP5401A3 Symbol BTN5551A3 Outline TO-92 B：Base C：Collector E：Emitter EBC Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating Junction Temperature Range Storage Temperature Range Symbol VCBO VCEO VEBO IC PD Tj Tstg BTN5551A3 Limits 180 160 6 600 625 150 -55~+150 Unit V V V mA mW °C.

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