BTN5551A3 - General Purpose NPN Epitaxial Planar Transistor

Product Overview

Cystech Electonics

Part number	BTN5551A3
Manufacturer	Cystech Electonics
File Size	257.06 KB
Description	General Purpose NPN Epitaxial Planar Transistor
Datasheet	BTN5551A3 Datasheet
Additional preview pages of the BTN5551A3 datasheet.

The BTN5551A3 is designed for general purpose applications requiring high breakdown voltage.

High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA).
Complement to BTP5401A3 Symbol BTN5551A3 Outline TO-92 B：Base C：Collector E：Emitter EBC Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating Junction Temperature Range Storage Temperature Range Symbol VCBO VCEO VEBO IC PD Tj Tstg BTN5551A3 Limits 180 160 6 600 625 150 -55~+150 Unit V V V mA mW °C.

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Published: Mar 27, 2009 |