Datasheet Details
| Part number | BTN5551N3 |
|---|---|
| Manufacturer | Cystech Electonics |
| File Size | 184.54 KB |
| Description | General Purpose NPN Epitaxial Planar Transistor |
| Datasheet |
 BTN5551N3 Datasheet
|
|
|
General Description
The BTN5551N3 is designed for general purpose applications requiring high breakdown voltage.
Key Features
- High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA).
- Complement to BTP5401N3 Symbol BTN5551N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 180 160 6 600 225 150 -55~+150 Unit V V V mA mW °C °C BTN5551N3 CYStek Product Specificati.