Description
The BTN5551N3 is designed for general purpose applications requiring high breakdown voltage.
Features
- High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA).
- Complement to BTP5401N3
Symbol
BTN5551N3
Outline
SOT-23
B：Base C：Collector E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 180 160 6 600 225 150 -55~+150 Unit V V V mA mW °C °C
BTN5551N3
CYStek Product Specificati.
BTN5551N3 Datasheet
