BTN5551N3 Datasheet | Cystech Electonics

Description The BTN5551N3 is designed for general purpose applications requiring high breakdown voltage. Features - High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1m A) - plement to BTP5401N3 Symbol Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 180 160 6 600 225 150 -55~+150 Unit V V V m A m W °C °C CYStek Product Specification CYStech Electronics Corp. .. Spec. No. : C208N3-H Issued Date : 2003.06.06 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO - VCE(sat)1 - VCE(sat)2 - VBE(sat)1 - VBE(sat)2 - h FE1 - h FE2 - h FE3 - h FE4 f T Cob Min. 180 160 6 80 80 30 52 100 Typ. 0.1 Max. 50 50 0.15 0.2. 1 1 390 6 Unit V V V n A n A V V V V MHz p F Test Conditions IC=100µA IC=1m A IE=10µA VCB=120V VEB=4V IC=10m A, IB=1m A IC=50m A, IB=5m A IC=10m A, IB=1m A IC=50m A, IB=5m A VCE=5V, IC=1m A VCE=5V, IC=10m A VCE=5V, IC=50m A VCE=6V, IC=2m A VCE=20V, IC=10m A, f=100MHz VCB=20V, IE=0A,f=1MHz - Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% Classification Of h FE4 Rank Range K 52~120 P 82~180 Q 120~270 R 180~390 Characteristic Curves Current Gain vs Collector Current 1000 Saturation Voltage---(m V) HFE@VCE=6V Current Gain---HFE 1000 VCE(SAT)@IC=10IB Saturation Voltage vs Collector...