BTN5551N3 Description
The BTN5551N3 is designed for general purpose applications requiring high breakdown voltage.
BTN5551N3 Key Features
- High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA)
- plement to BTP5401N3
- Part: BTN5551N3
- Manufacturer: Cystech Electonics
- Size: 184.54 KB
Related Cystech Electonics Datasheets
| Part Number | Description |
|---|---|
| BTN5551A3 | General Purpose NPN Epitaxial Planar Transistor |
| BTN1053L3 | NPN Epitaxial Planar Transistor |
| BTN1053M3 | NPN Epitaxial Planar Transistor |
| BTN2129A3 | NPN Epitaxial Planar Transistor |
| BTN2129E3 | NPN Epitaxial Planar Transistor |