BTN5551A3
BTN5551A3 is General Purpose NPN Epitaxial Planar Transistor manufactured by Cystech Electonics.
Description
The BTN5551A3 is designed for general purpose applications requiring high breakdown voltage.
Features
- High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1m A)
- plement to BTP5401A3
Symbol
Outline
TO-92
B：Base C：Collector E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating Junction Temperature Range Storage Temperature Range
Symbol
VCBO VCEO VEBO
IC PD Tj Tstg
Limits
180 160
6 600 625 150 -55~+150
Unit
V V V m A m W °C °C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C208A3 Issued Date : 2003.06.06 Revised Date : 2012.10.02 Page No. : 2/7
Characteristics (Ta=25°C)
Symbol
BVCBO BVCEO BVEBO
ICBO IEBO
- VCE(sat)1
- VCE(sat)2
-...
