Description
The BTN5551A3 is designed for general purpose applications requiring high breakdown voltage.
Features
- High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA).
- Complement to BTP5401A3
Symbol
BTN5551A3
Outline
TO-92
B：Base C：Collector E：Emitter
EBC
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating Junction Temperature Range Storage Temperature Range
Symbol
VCBO VCEO VEBO
IC PD Tj Tstg
BTN5551A3
Limits
180 160
6 600 625 150 -55~+150
Unit
V V V mA mW °C.
BTN5551A3 Datasheet
