BTN5551A3 Overview
The BTN5551A3 is designed for general purpose applications requiring high breakdown voltage.
BTN5551A3 Key Features
- High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA)
- plement to BTP5401A3
General Purpose NPN Epitaxial Planar Transistor
| Part number | BTN5551A3 |
|---|---|
| Manufacturer | Cystech Electonics |
| File Size | 257.06 KB |
| Description | General Purpose NPN Epitaxial Planar Transistor |
| Datasheet | BTN5551A3_CystechElectonics.pdf |
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The BTN5551A3 is designed for general purpose applications requiring high breakdown voltage.
See all Cystech Electonics datasheets
| Part Number | Description |
|---|---|
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