BTN5551N3 transistor equivalent, general purpose npn epitaxial planar transistor.
* High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA)
* Complement to BTP5401N3
Symbol
BTN5551N3
Outline
SOT-23
B:Base C:Collector E:Emitter
Absol.
requiring high breakdown voltage.
Features
* High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA)
* .
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