BTN5551N3 - General Purpose NPN Epitaxial Planar Transistor

Product Overview

Cystech Electonics

Part number	BTN5551N3
Manufacturer	Cystech Electonics
File Size	184.54 KB
Description	General Purpose NPN Epitaxial Planar Transistor
Datasheet	BTN5551N3 Datasheet
Additional preview pages of the BTN5551N3 datasheet.

The BTN5551N3 is designed for general purpose applications requiring high breakdown voltage.

High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA).
Complement to BTP5401N3 Symbol BTN5551N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 180 160 6 600 225 150 -55~+150 Unit V V V mA mW °C °C BTN5551N3 CYStek Product Specificati.

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Published: Mar 27, 2009 |