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Cystech Electonics

MTB012N04J3 Datasheet Preview

MTB012N04J3 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C450J3
Issued Date : 2016.11.11
Revised Date :
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTB012N04J3 BVDSS
40V
ID@VGS=10V, TC=25°C
40A
RDS(ON)@VGS=10V, ID=20A 9.6 mΩ(typ)
RDS(ON)@VGS=4.5V, ID=20A 13.4 mΩ(typ)
Features
Simple Drive Requirement
Repetitive Avalanche Rated
Fast Switching Characteristic
RoHS compliant package & Halogen-free package
Symbol
MTB012N04J3
Outline
TO-252(DPAK)
GGate
DDrain
SSource
G DS
Ordering Information
Device
Package
MTB012N04J3-0-T3-G
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB012N04J3
CYStek Product Specification




Cystech Electonics

MTB012N04J3 Datasheet Preview

MTB012N04J3 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C450J3
Issued Date : 2016.11.11
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current
(Note 1)
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=20A, VDD=15V
Repetitive Avalanche Energy@ L=0.05mH
(Note 2)
Total Power Dissipation @ TC=25
Total Power Dissipation @ TC=100
Operating Junction and Storage Temperature Range
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle 1%
Symbol
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Limits
40
±20
40
28
160
20
20
10
50
25
-55~+175
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
RθJC
RθJA
Value
3
75
Unit
°C/W
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
40 -
1.0 -
-
2.5
V
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
-
-
±100
nA VGS=±20V, VDS=0V
-
-
-
-
1
25
μA
VDS =32V, VGS =0V
VDS =30V, VGS =0V, Tj=125°C
-
-
9.6
13.4
13
20
mΩ
VGS =10V, ID=20A
VGS =4.5V, ID=10A
- 25 - S VDS =5V, ID=20A
- 14.4
-
- 2.8
- nC ID=20A, VDS=20V, VGS=10V
-3
-
- 8.6
-
- 17.8
- 39.8
-
-
ns
VDS=20V, ID=1A, VGS=10V,
RGS=6Ω
- 10.4
-
MTB012N04J3
CYStek Product Specification


Part Number MTB012N04J3
Description N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
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