MTB012N04Q8 - N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Datasheet Details

Part number	MTB012N04Q8
Manufacturer	Cystech Electonics
File Size	429.66 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTB012N04Q8-CystechElectonics.pdf

BVDSS ID @ TA=25°C, VGS=10V RDS(ON)@VGS=10V, ID=8A RDS(ON)@VGS=4.5V, ID=6A.
Single Drive Requirement.
Low On-resistance.
Fast Switching Characteristic.
Repetitive Avalanche Rated.
Pb-free & Halogen-free package 40V 11A 8.7 mΩ(typ) 12.4mΩ(typ) Symbol MTB012N04Q8 Outline DD SOP-8 DD G：Gate D：Drain S：Source Pin 1 G SSS Ordering Information Device Package Shipping MTB012N04Q8-0-T3-G SOP-8 (RoHS compliant & Halogen-free package) 2500 pcs /.

📁 MTB012N04Q8 Similar Datasheet

MTB010A03H8 - Dual N-Channel Enhancement Mode Power MOSFET (CYStech)
MTB010A06RH8 - Dual N-Channel Enhancement Mode Power MOSFET (CYStech)
MTB010N06I3 - N-Channel Enhancement Mode Power MOSFET (CYStech Electronics)
MTB010N06RH8 - N-Channel Enhancement Mode Power MOSFET (CYStech)
MTB010N06RI3 - N-Channel MOSFET (CYStech)
MTB010N06RJ3 - N-Channel MOSFET (CYStech)
MTB011 - High Output Interface Driver ICs (Shindengen Electric)
MTB013N10RH8 - N-Channel Enhancement Mode Power MOSFET (CYStech Electronics)

Other Datasheets by Cystech Electonics

Published: Feb 28, 2017 |