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Cystech Electonics

MTB012N04Q8 Datasheet Preview

MTB012N04Q8 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C450Q8
Issued Date : 2017.01.09
Revised Date :
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTB012N04Q8
Features
BVDSS
ID @ TA=25°C, VGS=10V
RDS(ON)@VGS=10V, ID=8A
RDS(ON)@VGS=4.5V, ID=6A
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Repetitive Avalanche Rated
Pb-free & Halogen-free package
40V
11A
8.7 mΩ(typ)
12.4mΩ(typ)
Symbol
MTB012N04Q8
Outline
DD
SOP-8
DD
GGate DDrain SSource
Pin 1
G
SSS
Ordering Information
Device
Package
Shipping
MTB012N04Q8-0-T3-G
SOP-8
(RoHS compliant & Halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB012N04Q8
CYStek Product Specification




Cystech Electonics

MTB012N04Q8 Datasheet Preview

MTB012N04Q8 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C450Q8
Issued Date : 2017.01.09
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Tc=25°C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=70°C, VGS=10V
Pulsed Drain Current
Avalanche Current @ L=0.1mH
Avalanche Energy @ L=1mH, ID=12A, VDD=25V
Repetitive Avalanche Energy @ L=0.05mH
Total Power Dissipation
TA=25 °C
TA=70 °C
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
Operating Junction and Storage Temperature
Tj, Tstg
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle 1%
*3. 100% tested by conditions of L=0.1mH, IAS=15A, VGS=10V, VDD=25V
Limits
40
±20
11
8.8
80 *1
24
72 *3
1.6 *2
3.1
2
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case
Thermal Resistance, Junction-to-ambient (Note)
RθJC
RθJA
20
40
°C/W
Note : 40°C / W when mounted on a 1 in2 pad of 2 oz copper, t10s; 125°C/W when mounted on minimum pad.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max.
Unit Test Conditions
Static
BVDSS
VGS(th)
GFS
IGSS
IDSS
*RDS(ON)
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
Ciss
Coss
Crss
40 -
-
1-
2.5
- 10.1
-
- - ±100
--
1
--
25
- 8.7 11.5
- 12.4
17
- 7.3
- 2.5
- 2.8
- 689
- 107
- 53
-
-
-
-
-
-
V
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
S VDS =10V, ID=5A
nA VGS=±20V
μA
VDS =32V, VGS =0V
VDS =32V, VGS =0V, Tj=125°C
mΩ
VGS =10V, ID=8A
VGS =4.5V, ID=6A
nC VDS=20V, VGS=4.5V, ID=7.2A
pF VDS=20V, VGS=0V, f=1MHz
MTB012N04Q8
CYStek Product Specification


Part Number MTB012N04Q8
Description N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
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