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MTB012N10RQ8 N-Channel Enhancement Mode Power MOSFET

MTB012N10RQ8 Description

CYStech Electronics Corp.N-Channel Enhancement Mode Power MOSFET MTB012N10RQ8 Spec.No.: C056Q8 Issued Date : 2016.08.26 Revised Date : 2016.11.08 .

MTB012N10RQ8 Features

* Single Drive Requirement
* Low On-resistance
* Fast Switching Characteristic
* Repetitive Avalanche Rated
* Pb-free & Halogen-free package BVDSS ID @ TA=25°C, VGS=10V RDS(ON)@VGS=10V, ID=10A RDS(ON)@VGS=4.5V, ID=8A 100V 10A 10.3 mΩ(typ) 12.3 mΩ(typ) Symbol MTB012N10RQ8 Outl

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Datasheet Details

Part number
MTB012N10RQ8
Manufacturer
Cystech Electonics
File Size
619.14 KB
Datasheet
MTB012N10RQ8-CystechElectonics.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET Cystech Electonics
Cystech Electonics MTB012N10RQ8-like datasheet