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Cystech Electonics

MTB020A03KV8 Datasheet Preview

MTB020A03KV8 Datasheet

Dual N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C143V8
Issued Date : 2016.06.13
Revised Date :
Page No. : 1/9
Dual N-Channel Enhancement Mode MOSFET
MTB020A03KV8 BVDSS
ID@VGS=10V, TA=25°C
ID@VGS=10V, TC=25°C
RDSON@VGS=10V typ.
RDSON@VGS=4.5V typ.
30V
6.6A
12A
15.2 mΩ
20.1 mΩ
Features
Simple drive requirement
Low on-resistance
Fast switching speed
Pb-free lead plating and halogen-free package
Equivalent Circuit
MTB020A03KV8
Outline
D2
D2
D1
D1
DFN3×3
D1
D1
D2
D2
GGate SSource DDrain
Pin 1
G2
S2
G1
S1
S1
G1
S2
G2
Ordering Information
Device
MTB020A03KV8-0-T6-G
Package
Shipping
DFN3×3
(Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB020A03KV8
CYStek Product Specification




Cystech Electonics

MTB020A03KV8 Datasheet Preview

MTB020A03KV8 Datasheet

Dual N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Drain-Source Breakdown Voltage
BVDSS
Gate-Source Voltage
VGS
Continuous Drain Current *2
TA=25 °C, VGS=10V
TA=70 °C, VGS=10V
IDSM
Continuous Drain Current
TC=25 °C, VGS=10V
TC=100 °C, VGS=10V
ID
Pulsed Drain Current * 3
IDM
TA=25°C, Single device operation
Total Power
Dissipation
TA=70°C, Single device operation
TA=25°C,Single device value at dual operation
TA=70°C,Single device value at dual operation
PDSM
TC=25°C
TC=100°C
PD * 1
Operating Junction and Storage Temperature Range
Tj; Tstg
Spec. No. : C143V8
Issued Date : 2016.06.13
Revised Date :
Page No. : 2/9
Limits
30
±16
6.6
5.3
12
7.6
48
1.5 *2
0.96 *2
1.24 *2
0.79 *2
5
2
-55~+150
Unit
V
A
W
°C
Thermal Data
Parameter
Max. Thermal Resistance, Junction-to-ambient, single device operation
Max. Thermal Resistance, Junction-to-ambient, single device value at dual operation
Max. Thermal Resistance, Junction-to-case
Symbol
Rth,j-a
Rth,j-c
Value
84 *2
101 *2
25
Unit
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C, t5s. 216°C/W when mounted on a minimum pad of 2 oz. copper. The power dissipation
PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user’s specific board design.
3. Pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low duty cycles to keep initial
TJ=25°C.
N-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit
Test Conditions
Static
BVDSS
VGS(th)
30
1
-
-
-
2.5
V
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
IGSS - - ±10
VGS=±16V, VDS=0V
IDSS
-
-
- 1 μA VDS=30V, VGS=0V
- 10
VDS=24V, VGS=0V, Tj=70°C
*RDS(ON)
-
-
15.2
20.1
20
28
mΩ
VGS=10V, ID=10A
VGS=4.5V, ID=8A
*GFS
- 3.6 - S VDS=10V, ID=1A
MTB020A03KV8
CYStek Product Specification


Part Number MTB020A03KV8
Description Dual N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
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