Datasheet Details
| Part number | MTB020N03E3 |
|---|---|
| Manufacturer | Cystech Electonics |
| File Size | 318.21 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 MTB020N03E3 Datasheet
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Key Features
- RDS(ON)@VGS=10V, ID=20A.
- Low Gate Charge.
- Simple Drive Requirement.
- Repetitive Avalanche Rated.
- Fast Switching Characteristic.
- Pb-free lead plating and RoHS compliant package 30V 34A 18mΩ (typ) Symbol MTB020N03E3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device MTB020N03E3-0-UB-X Package Shipping TO-220 (Pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for.