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Cystech Electonics

MTB020N03KJ3 Datasheet Preview

MTB020N03KJ3 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C143J3
Issued Date : 2015.12.15
Revised Date : 2016.02.22
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTB020N03KJ3
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
VGS=10V, ID=20A
RDSON(TYP) VGS=4.5V, ID=10A
Features
VGS=4V, ID=10A
Low Gate Charge
Simple Drive Requirement
ESD Protected Gate
Pb-free lead plating and halogen-free package
30V
30A
9A
13mΩ
18mΩ
21mΩ
Equivalent Circuit
MTB020N03KJ3
Outline
TO-252(DPAK)
GGate DDrain SSource
G DS
Ordering Information
Device
Package
Shipping
MTB020N03KJ3-0-T3-G
TO-252
(Pb-free lead plating and halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13reel
Product rank, zero for no rank products
Product name
MTB020N03KJ3
CYStek Product Specification




Cystech Electonics

MTB020N03KJ3 Datasheet Preview

MTB020N03KJ3 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C143J3
Issued Date : 2015.12.15
Revised Date : 2016.02.22
Page No. : 2/9
Absolute Maximum Ratings (TC=25C)
Parameter
Drain-Source Voltage (Note 1)
Gate-Source Voltage
Continuous Drain Current @TC=25C, VGS=10V
Continuous Drain Current @TC=100C, VGS=10V
Continuous Drain Current @TA=25C, VGS=10V
Continuous Drain Current @TA=100C, VGS=10V
Pulsed Drain Current @ VGS=10V
Single Pulse Avalanche Current @ L=0.1mH
Single Pulse Avalanche Energy @ L=5mH, ID=6A, VDD=15V
TC=25C
Power Dissipation
TC=100C
TA=25C
TA=100C
Operating Junction and Storage Temperature
Symbol
VDS
VGS
(Note 1)
(Note 1)
ID
(Note 2)
(Note 2)
(Note 3)
IDSM
IDM
IAS
(Note 4)
EAS
(Note 1)
(Note 1)
PD
(Note 2)
(Note 2)
PDSM
Tj, Tstg
Limits
30
±20
30
19
9
5.7
100
21
90
50
20
2.5
1.0
-55~+150
Unit
V
A
mJ
W
C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 2)
Symbol
RθJC
RθJA
Value
2.5
50
Unit
C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2.The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C.
3. Pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and low duty cycles
to keep initial TJ=25°C.
4. 100% tested by conditions of L=100μH, IAS=10A, VGS=10V, VDD=15V
MTB020N03KJ3
CYStek Product Specification


Part Number MTB020N03KJ3
Description N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
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