MTB020N03KJ3 Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: Cystech Electonics

Overview: CYStech Electronics Corp. Spec. No. : C143J3 Issued Date : 2015.12.15 Revised Date : 2016.02.22 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTB020N03KJ3 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C VGS=10V, ID=20A RDSON(TYP) VGS=4.

Datasheet Details

Part number	MTB020N03KJ3
Manufacturer	Cystech Electonics
File Size	484.83 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTB020N03KJ3-CystechElectonics.pdf

Key Features

VGS=4V, ID=10A.
Low Gate Charge.
Simple Drive Requirement.
ESD Protected Gate.
Pb-free lead plating and halogen-free package 30V 30A 9A 13mΩ 18mΩ 21mΩ Equivalent Circuit MTB020N03KJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device Package Shipping MTB020N03KJ3-0-T3-G TO-252 (Pb-free lead plating and halogen-free package) 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and gre.

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