n-channel enhancement mode power mosfet.
VGS=4V, ID=10A
* Low Gate Charge
* Simple Drive Requirement
* ESD Protected Gate
* Pb-free lead plating and halogen-free package
30V 30A 9A 13mΩ 18mΩ 2.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 484.83KB)