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Cystech Electonics

MTB020N03KM3 Datasheet Preview

MTB020N03KM3 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
30V N-Channel Enhancement Mode MOSFET
MTB020N03KM3
Spec. No. : C143M3
Issued Date : 2016.01.21
Revised Date : 2016.02.22
Page No. : 1/9
Features
Simple drive requirement
Small package outline
ESD protected gate
Pb-free lead plating and halogen-free package
BVDSS
ID@VGS=10V, TA=25°C
RDSON@VGS=10V, ID=5A
RDSON@VGS=4.5V, ID=4A
30V
7A
15.3mΩ(typ)
19.4mΩ(typ)
Symbol
MTB020N03KM3
Outline
SOT-89
GGate
SSource
DDrain
GD D S
Ordering Information
Device
MTB020N03KM3-0-T2-G
Package
Shipping
SOT-89
(Pb-free lead plating and halogen-free package)
1000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, T2 :1000 pcs/tape & reel, 7” reel
Product rank, zero for no rank products
Product name
MTB020N03KM3
CYStek Product Specification




Cystech Electonics

MTB020N03KM3 Datasheet Preview

MTB020N03KM3 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C143M3
Issued Date : 2016.01.21
Revised Date : 2016.02.22
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=10V (Note 3)
Continuous Drain Current @ TA=70°C, VGS=10V (Note 3)
Pulsed Drain Current (Notes 1, 2)
Maximum Power Dissipation@ TA=25(Note 3)
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
Tj ; Tstg
Limits
30
±20
7
5.6
42
2
0.016
-55~+150
Unit
V
A
W
W/°C
°C
Thermal Performance
Parameter
Symbol
Limit
Thermal Resistance, Junction-to-Ambient, max
(Note 3)
RθJA
62.5
Thermal Resistance, Junction-to-Case, max
RθJC
20
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width300μs, duty cycle2%.
3. Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad
Unit
°C/W
Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
Ciss
Coss
Crss
td(ON)
tr
td(OFF)
tf
MTB020N03KM3
Min.
30
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ. Max.
--
- 2.5
- ±10
-1
- 25
15.3 20
19.4 26
4.5 -
450 -
79 -
60 -
5.8 -
18.6 -
33.8 -
11.8 -
Unit Test Conditions
V
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VGS=±16V, VDS=0V
μA VDS=30V, VGS=0V
VDS=24V, VGS=0V(Tj=70°C)
mΩ
VGS=10V, ID=5A
VGS=4.5V, ID=4A
S VDS=10V, ID=4A
pF VDS=15V, VGS=0V, f=1MHz
ns VDS=15V, ID=1A, VGS=10V, RG=6Ω
CYStek Product Specification


Part Number MTB020N03KM3
Description N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
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