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Cystech Electonics

MTB050P10E3 Datasheet Preview

MTB050P10E3 Datasheet

P-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C975E3
Issued Date : 2014.07.10
Revised Date :
Page No. : 1/8
P-Channel Enhancement Mode Power MOSFET
MTB050P10E3
BVDSS
ID @ VGS=-10V
RDSON(TYP) @ VGS=-10V, ID=-20A
RDSON(TYP) @ VGS=-4.5V, ID=-15A
-100V
-40A
46mΩ
52mΩ
Features
Low Gate Charge
Simple Drive Requirement
Repetitive Avalanche Rated
Fast Switching Characteristic
RoHS compliant package
Symbol
MTB050P10E3
Outline
TO-220
GGate
DDrain
SSource
GDS
Ordering Information
Device
MTB050P10E3-0-UB-S
Package
TO-220
(Pb-free lead plating package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTB050P10E3
CYStek Product Specification




Cystech Electonics

MTB050P10E3 Datasheet Preview

MTB050P10E3 Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C975E3
Issued Date : 2014.07.10
Revised Date :
Page No. : 2/8
Absolute Maximum Ratings (TC=25C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25C, VGS=-10V
Continuous Drain Current @ TC=100C, VGS=-10V
Pulsed Drain Current
Continuous Drain Current @ TA=25C , VGS=10V
Continuous Drain Current @ TA=70C , VGS=10V
Avalanche Current
Avalanche Energy @ L=1mH, ID=-21A, RG=25Ω
Repetitive Avalanche Energy@ L=0.1mH
Power Dissipation
TC=25°C
TC=100°C
Power Dissipation
TA=25°C
TA=70°C
Operating Junction and Storage Temperature
(Note 3)
(Note 2)
(Note 2)
(Note 3)
(Note 2)
(Note 3)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
Symbol
VDS
VGS
ID
IDM
IDSM
IAS
EAS
EAR
PD
PDSM
Tj, Tstg
Limits
-100
±20
-40
-28
-140
-3.9
-3.1
25
221
20
200
100
2
1.3
-55~+175
Unit
V
A
mJ
W
W
C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
(Note 1)
Symbol
Rth,j-c
Value
0.75
62
Unit
C/W
C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4. The static characteristics are obtained using <300μs pulses, duty cycle 0.5% maximum.
5. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient.
MTB050P10E3
CYStek Product Specification


Part Number MTB050P10E3
Description P-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
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