MTB050P10E3 Description
CYStech Electronics Corp. 2014.07.10 Revised Date.
MTB050P10E3 Key Features
- Low Gate Charge
- Simple Drive Requirement
- Repetitive Avalanche Rated
- Fast Switching Characteristic
- RoHS pliant package
MTB050P10E3 is P-Channel Enhancement Mode Power MOSFET manufactured by Cystech Electonics.
| Part Number | Description |
|---|---|
| MTB050P10F3 | P-Channel Enhancement Mode Power MOSFET |
| MTB050P10H8 | P-Channel Enhancement Mode Power MOSFET |
| MTB050P10J3 | P-Channel Enhancement Mode Power MOSFET |
| MTB050N15J3 | N-Channel Enhancement Mode Power MOSFET |
| MTB05N03HQ8 | N-Channel Enhancement Mode Power MOSFET |
CYStech Electronics Corp. 2014.07.10 Revised Date.