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MTB050P10E3 - P-Channel Enhancement Mode Power MOSFET

Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Repetitive Avalanche Rated.
  • Fast Switching Characteristic.
  • RoHS compliant package Symbol MTB050P10E3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device MTB050P10E3-0-UB-S Package TO-220 (Pb-free lead plating package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 p.

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Datasheet Details

Part number MTB050P10E3
Manufacturer Cystech Electonics
File Size 272.81 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB050P10E3 Datasheet
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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C975E3 Issued Date : 2014.07.10 Revised Date : Page No. : 1/8 P-Channel Enhancement Mode Power MOSFET MTB050P10E3 BVDSS ID @ VGS=-10V RDSON(TYP) @ VGS=-10V, ID=-20A RDSON(TYP) @ VGS=-4.
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