• Part: MTB050P10H8
  • Description: P-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: Cystech Electonics
  • Size: 550.63 KB
Download MTB050P10H8 Datasheet PDF
Cystech Electonics
MTB050P10H8
MTB050P10H8 is P-Channel Enhancement Mode Power MOSFET manufactured by Cystech Electonics.
Features - Single Drive Requirement - Low On-resistance - Fast Switching Characteristic - Pb-free lead plating and Halogen-free package RDSON(TYP) VGS=-10V, ID=-15A VGS=-4.5V, ID=-12A -100V -20A -4.4A 39.5mΩ 45.3mΩ Symbol G:Gate D:Drain S:Source Outline Pin 1 DFN5×6 Pin 1 Ordering Information Device MTB050P10H8-0-T6-G Package DFN5×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for Ro HS pliant products, G for Ro HS pliant and green pound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name CYStek Product Specification CYStech Electronics Corp. Spec. No. : C975H8 Issued Date : 2016.08.01 Revised Date : Page No. : 2/11 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=-10V (Note1) Continuous Drain Current @ TC=100°C, VGS=-10V (Note1) Continuous Drain Current @ TA=25°C, VGS=-10V (Note2) Continuous Drain Current @ TA=70°C, VGS=-10V (Note2) Pulsed Drain Current (Note3) Avalanche Current@L=1m...