MTB050P10H8 Description
CYStech Electronics Corp. 2016.08.01 Revised Date : 1/11 P-Channel Enhancement Mode Power MOSFET MTB050P10H8 BVDSS ID@VGS=-10V, TC=25°C ID@VGS=-10V, TA=25°C.
MTB050P10H8 Key Features
- Single Drive Requirement
- Low On-resistance
- Fast Switching Characteristic
- Pb-free lead plating and Halogen-free package
- 100V -20A -4.4A 39.5mΩ 45.3mΩ