Datasheet4U Logo Datasheet4U.com

MTB050P10J3 - P-Channel Enhancement Mode Power MOSFET

Features

  • RDS(ON)@VGS=-4.5V, ID=-12A.
  • Single Drive Requirement.
  • Low On-resistance.
  • Fast switching Characteristic.
  • Pb-free lead plating and halogen-free package -100V -24A -17A -4.1A -3.3A 45 mΩ(typ) 51 mΩ(typ) Symbol MTB050P10J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTB050P10J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS.

📥 Download Datasheet

Datasheet preview – MTB050P10J3

Datasheet Details

Part number MTB050P10J3
Manufacturer Cystech Electonics
File Size 345.78 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB050P10J3 Datasheet
Additional preview pages of the MTB050P10J3 datasheet.

📁 Similar Datasheet

Other Datasheets by Cystech Electonics

Full PDF Text Transcription

Click to expand full text
CYStech Electronics Corp. Spec. No. : C975J3 Issued Date : 2015.03.17 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTB050P10J3 BVDSS ID@VGS=-10V, TC=25°C ID@VGS=-10V, TC=100°C ID@VGS=-10V, TA=25°C ID@VGS=-10V, TA=70°C RDS(ON)@VGS=-10V, ID=-15A Features RDS(ON)@VGS=-4.5V, ID=-12A • Single Drive Requirement • Low On-resistance • Fast switching Characteristic • Pb-free lead plating and halogen-free package -100V -24A -17A -4.1A -3.
Published: |