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MTB050P10F3 - P-Channel Enhancement Mode Power MOSFET

Key Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Repetitive Avalanche Rated.
  • Fast Switching Characteristic.
  • RoHS compliant package Symbol MTB050P10F3 Outline TO-263 G:Gate D:Drain S:Source G DS Ordering Information Device MTB050P10F3-0-T7-S Package Shipping TO-263 (Pb-free lead plating and RoHS compliant package) 800 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products P.

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Datasheet Details

Part number MTB050P10F3
Manufacturer Cystech Electonics
File Size 326.91 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB050P10F3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C975F3 Issued Date : 2014.08.13 Revised Date : 2014.10.02 Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTB050P10F3 BVDSS ID @ VGS=-10V RDSON(TYP) @ VGS=-10V, ID=-20A RDSON(TYP) @ VGS=-4.