MTB050P10F3
MTB050P10F3 is P-Channel Enhancement Mode Power MOSFET manufactured by Cystech Electonics.
Features
- Low Gate Charge
- Simple Drive Requirement
- Repetitive Avalanche Rated
- Fast Switching Characteristic
- Ro HS pliant package
Symbol
Outline
TO-263
G:Gate D:Drain S:Source
G DS
Ordering Information
Device MTB050P10F3-0-T7-S
Package
Shipping
TO-263 (Pb-free lead plating and Ro HS pliant package)
800 pcs / Tape & Reel
Environment friendly grade : S for Ro HS pliant products, G for Ro HS pliant and green pound products
Packing spec, T7 : 800 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C975F3 Issued Date : 2014.08.13 Revised Date : 2014.10.02 Page No. : 2/9
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=-10V Continuous Drain Current @ TC=100°C, VGS=-10V Pulsed Drain Current
Continuous Drain Current @ TA=25°C , VGS=10V
Continuous Drain Current @ TA=70°C , VGS=10V
Avalanche Current
Avalanche Energy @ L=1m H, ID=-21A, RG=25Ω
Repetitive Avalanche Energy@ L=0.1m H
Power Dissipation
TC=25°C TC=100°C
Power Dissipation
TA=25°C TA=70°C
Operating Junction and Storage Temperature
(Note 3) (Note 2) (Note 2) (Note 3) (Note 2)
(Note...