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MTB050P10F3 - P-Channel Enhancement Mode Power MOSFET

Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Repetitive Avalanche Rated.
  • Fast Switching Characteristic.
  • RoHS compliant package Symbol MTB050P10F3 Outline TO-263 G：Gate D：Drain S：Source G DS Ordering Information Device MTB050P10F3-0-T7-S Package Shipping TO-263 (Pb-free lead plating and RoHS compliant package) 800 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products P.

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Datasheet Details

Part number MTB050P10F3
Manufacturer Cystech Electonics
File Size 326.91 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB050P10F3 Datasheet
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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C975F3 Issued Date : 2014.08.13 Revised Date : 2014.10.02 Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTB050P10F3 BVDSS ID @ VGS=-10V RDSON(TYP) @ VGS=-10V, ID=-20A RDSON(TYP) @ VGS=-4.
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