MTB050P10E3 Overview
CYStech Electronics Corp. 2014.07.10 Revised Date.
MTB050P10E3 Key Features
- Low Gate Charge
- Simple Drive Requirement
- Repetitive Avalanche Rated
- Fast Switching Characteristic
- RoHS pliant package
MTB050P10E3 datasheet by Cystech Electonics.
| Part number | MTB050P10E3 |
|---|---|
| Datasheet | MTB050P10E3-CystechElectonics.pdf |
| File Size | 272.81 KB |
| Manufacturer | Cystech Electonics |
| Description | P-Channel Enhancement Mode Power MOSFET |
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CYStech Electronics Corp. 2014.07.10 Revised Date.
View all Cystech Electonics datasheets
| Part Number | Description |
|---|---|
| MTB050P10F3 | P-Channel Enhancement Mode Power MOSFET |
| MTB050P10H8 | P-Channel Enhancement Mode Power MOSFET |
| MTB050P10J3 | P-Channel Enhancement Mode Power MOSFET |
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