Datasheet4U Logo Datasheet4U.com

MTB050P10E3 - P-Channel Enhancement Mode Power MOSFET

Key Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Repetitive Avalanche Rated.
  • Fast Switching Characteristic.
  • RoHS compliant package Symbol MTB050P10E3 Outline TO-220 G:Gate D:Drain S:Source GDS Ordering Information Device MTB050P10E3-0-UB-S Package TO-220 (Pb-free lead plating package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 p.

📥 Download Datasheet

Datasheet Details

Part number MTB050P10E3
Manufacturer Cystech Electonics
File Size 272.81 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB050P10E3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CYStech Electronics Corp. Spec. No. : C975E3 Issued Date : 2014.07.10 Revised Date : Page No. : 1/8 P-Channel Enhancement Mode Power MOSFET MTB050P10E3 BVDSS ID @ VGS=-10V RDSON(TYP) @ VGS=-10V, ID=-20A RDSON(TYP) @ VGS=-4.