• Part: MTB050P10F3
  • Description: P-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: Cystech Electonics
  • Size: 326.91 KB
Download MTB050P10F3 Datasheet PDF
Cystech Electonics
MTB050P10F3
MTB050P10F3 is P-Channel Enhancement Mode Power MOSFET manufactured by Cystech Electonics.
Features - Low Gate Charge - Simple Drive Requirement - Repetitive Avalanche Rated - Fast Switching Characteristic - Ro HS pliant package Symbol Outline TO-263 G:Gate D:Drain S:Source G DS Ordering Information Device MTB050P10F3-0-T7-S Package Shipping TO-263 (Pb-free lead plating and Ro HS pliant package) 800 pcs / Tape & Reel Environment friendly grade : S for Ro HS pliant products, G for Ro HS pliant and green pound products Packing spec, T7 : 800 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name CYStek Product Specification CYStech Electronics Corp. Spec. No. : C975F3 Issued Date : 2014.08.13 Revised Date : 2014.10.02 Page No. : 2/9 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=-10V Continuous Drain Current @ TC=100°C, VGS=-10V Pulsed Drain Current Continuous Drain Current @ TA=25°C , VGS=10V Continuous Drain Current @ TA=70°C , VGS=10V Avalanche Current Avalanche Energy @ L=1m H, ID=-21A, RG=25Ω Repetitive Avalanche Energy@ L=0.1m H Power Dissipation TC=25°C TC=100°C Power Dissipation TA=25°C TA=70°C Operating Junction and Storage Temperature (Note 3) (Note 2) (Note 2) (Note 3) (Note 2) (Note...