MTB050P10H8 Datasheet | Cystech Electonics

CYStech Electronics Corp. Spec. No. : C975H8 Issued Date : 2016.08.01 Revised Date : Page No. : 1/11 P-Channel Enhancement Mode Power MOSFET MTB050P10H8 BVDSS ID@VGS=-10V, TC=25°C ID@VGS=-10V, TA=25°C Features - Single Drive Requirement - Low On-resistance - Fast Switching Characteristic - Pb-free lead plating and Halogen-free package RDSON(TYP) VGS=-10V, ID=-15A VGS=-4.5V, ID=-12A -100V -20A -4.4A 39.5mΩ 45.3mΩ Symbol G：Gate D：Drain S：Source Outline Pin 1 DFN5×6 Pin 1 Ordering Information Device MTB050P10H8-0-T6-G Package DFN5×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly...