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MTB050P10H8 - P-Channel Enhancement Mode Power MOSFET

Key Features

  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Pb-free lead plating and Halogen-free package RDSON(TYP) VGS=-10V, ID=-15A VGS=-4.5V, ID=-12A -100V -20A -4.4A 39.5mΩ 45.3mΩ Symbol MTB050P10H8 G：Gate D：Drain S：Source Outline Pin 1 S S S G DFN5×6 D D D D G S S S D D D D Pin 1 Ordering Information Device MTB050P10H8-0-T6-G Package DFN5×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Envi.

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Datasheet Details

Part number MTB050P10H8
Manufacturer Cystech Electonics
File Size 550.63 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB050P10H8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C975H8 Issued Date : 2016.08.01 Revised Date : Page No. : 1/11 P-Channel Enhancement Mode Power MOSFET MTB050P10H8 BVDSS ID@VGS=-10V, TC=25°C ID@VGS=-10V, TA=25°C Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Pb-free lead plating and Halogen-free package RDSON(TYP) VGS=-10V, ID=-15A VGS=-4.5V, ID=-12A -100V -20A -4.4A 39.5mΩ 45.