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Cystech Electonics

MTB050P10H8 Datasheet Preview

MTB050P10H8 Datasheet

P-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C975H8
Issued Date : 2016.08.01
Revised Date :
Page No. : 1/11
P-Channel Enhancement Mode Power MOSFET
MTB050P10H8 BVDSS
ID@VGS=-10V, TC=25°C
ID@VGS=-10V, TA=25°C
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Pb-free lead plating and Halogen-free package
RDSON(TYP)
VGS=-10V, ID=-15A
VGS=-4.5V, ID=-12A
-100V
-20A
-4.4A
39.5mΩ
45.3mΩ
Symbol
MTB050P10H8
GGate DDrain SSource
Outline
Pin 1
S
S
S
G
DFN5×6
D
D
D
D
G
S
S
S
D
D
D
D
Pin 1
Ordering Information
Device
MTB050P10H8-0-T6-G
Package
DFN5×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB050P10H8
CYStek Product Specification




Cystech Electonics

MTB050P10H8 Datasheet Preview

MTB050P10H8 Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C975H8
Issued Date : 2016.08.01
Revised Date :
Page No. : 2/11
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=-10V (Note1)
Continuous Drain Current @ TC=100°C, VGS=-10V (Note1)
Continuous Drain Current @ TA=25°C, VGS=-10V (Note2)
Continuous Drain Current @ TA=70°C, VGS=-10V (Note2)
Pulsed Drain Current
(Note3)
Avalanche Current@L=1mH
(Note4)
Avalanche Energy @ L=2mH, ID=-20A, VDD=-50V (Note4)
TC=25
(Note1)
Total Power Dissipation
TC=100
TA=25°C
(Note1)
(Note2)
TA=70°C
(Note2)
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDSM
IDM
IAS
EAS
PD
PDSM
Tj, Tstg
10s Steady State
-100
±20
-20
-12.7
-7.4 -4.4
-5.9 -3.5
-80
-20
400
42
16.8
5.4 1.9
3.4 1.2
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case
Thermal Resistance, Junction-to-ambient
(Note2)
t10s
Steady State
Symbol
Rth,j-c
Rth,j-a
Typical
2.5
18
50
Maximum
3
23
65
Unit
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
3. Pulse width limited by junction temperature TJ(MAX)=150°C.
4. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 100% tested by conditions of
L=1mH, IAS=-20A, VGS=-10V, VDD=-50V.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
-100
-1
-
-
-
-2.5
V
VGS=0V, ID=-250μA
VDS = VGS, ID=-250μA
GFS *1
-
23 -
S VDS =-15V, ID=-10A
IGSS
-
-
±100
nA VGS=±20V
IDSS
-
-
-
-
-1
-10
μA
VDS =-80V, VGS =0V
VDS =-80V, VGS =0, Tj=70°C
RDS(ON) *1
-
-
39.5
45.3
50
60
mΩ
VGS =-10V, ID=-15A
VGS =-4.5V, ID=-12A
MTB050P10H8
CYStek Product Specification


Part Number MTB050P10H8
Description P-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
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