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MTB050P10H8 - P-Channel Enhancement Mode Power MOSFET

Cystech Electonics

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Datasheet Details

Part number: MTB050P10H8
Manufacturer: Cystech Electonics
File Size: 550.63 KB
Datasheet: MTB050P10H8-CystechElectonics.pdf
Description: P-Channel Enhancement Mode Power MOSFET

MTB050P10H8 Product details

Features

Single Drive Requirement.
Low On-resistance.
Fast Switching Characteristic.
Pb-free lead plating and Halogen-free package RDSON(TYP) VGS=-10V, ID=-15A VGS=-4.5V, ID=-12A -100V -20A -4.4A 39.5mΩ 45.3mΩ Symbol MTB050P10H8 G：Gate D：Drain S：Source Outline Pin 1 S S S G DFN5×6 D D D D G S S S D D D D Pin 1 Ordering Information Device MTB050P10H8-0-T6-G Package DFN5×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Envi.

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P-Channel Enhancement Mode Power MOSFET Cystech Electonics

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