MTB080P06L3 Description
CYStech Electronics Corp. 2016.03.14 Revised Date.
MTB080P06L3 Key Features
- Low Gate Charge
- Simple Drive Requirement
- Pb-free lead plating & Halogen-free package
- 60V -3.3A 90mΩ (typ) 117mΩ (typ)
MTB080P06L3 is P-Channel Enhancement Mode Power MOSFET manufactured by Cystech Electonics.
| Part Number | Description |
|---|---|
| MTB080P06J3 | P-Channel Enhancement Mode Power MOSFET |
| MTB080P06M3 | P-Channel Enhancement Mode Power MOSFET |
| MTB080P06N3 | P-Channel Enhancement Mode Power MOSFET |
| MTB080P06N6 | P-Channel Enhancement Mode Power MOSFET |
| MTB080P06Q8 | P-Channel Enhancement Mode Power MOSFET |
CYStech Electronics Corp. 2016.03.14 Revised Date.