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Cystech Electonics

MTB080P06L3 Datasheet Preview

MTB080P06L3 Datasheet

P-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C069L3
Issued Date : 2016.03.14
Revised Date :
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTB080P06L3 BVDSS
ID @ TA=25°C, VGS=-10V
RDSON@VGS=-10V, ID=-4A
RDSON@VGS=-4.5V, ID=-2A
Features
Low Gate Charge
Simple Drive Requirement
Pb-free lead plating & Halogen-free package
-60V
-3.3A
90mΩ (typ)
117mΩ (typ)
Equivalent Circuit
MTB080P06L3
GGate DDrain
SSource
Outline
SOT-223
D
S
D
G
Ordering Information
Device
MTB080P06L3-0-T3-G
Package
SOT-223
(Pb-free lead plating & Halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB080P06L3
CYStek Product Specification




Cystech Electonics

MTB080P06L3 Datasheet Preview

MTB080P06L3 Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=-10V, TA=25°C
Continuous Drain Current @ VGS=-10V, TA=70°C
Pulsed Drain Current *1
Single Pulse Avalanche Current
Avalanche Energy @ L=6mH, ID=-4A, VDD=-15V
Repetitive Avalanche Energy @ L=0.05mH *2
Total Power Dissipation @TA=25
Total Power Dissipation @TA=70
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle 1%
Symbol
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Spec. No. : C069L3
Issued Date : 2016.03.14
Revised Date :
Page No. : 2/9
Limits
-60
±20
-3.3
-2.6
-14
-4
48
0.5
2.5
1.6
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
RƟJC
RƟJA
20
50 (Note)
°C/W
Note : Surface mounted on a 1 in2 pad of 2 oz. copper, t10s; 120°C/W when mounted on minimum copper pad.
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
RDS(ON) *1
GFS *1
-60
-1
-
-
-
-
-
-
-
-
-
-2.5
V
VGS=0V, ID=-250μA
VDS =VGS, ID=-250μA
-
±100
nA VGS=±20V, VDS=0V
-
-
-1
-25
μA
VDS =-60V, VGS =0V
VDS =-48V, VGS =0V, TJ=85°C
90
117
113
150
mΩ
VGS =-10V, ID=-4A
VGS =-4.5V, ID=-2A
6 - S VDS =-10V, ID=-3A
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr *1, 2
td(OFF) *1, 2
tf *1, 2
Ciss
Coss
Crss
- 11.4 -
- 2.1 - nC ID=-4A, VDS=-48V, VGS=-10V
- 3.2 -
- 6.4 -
-
-
17
25.2
-
-
ns
VDS=-30V, ID=-4A, VGS=-10V,
RG=3Ω
- 7.2 -
- 503 -
- 54 - pF VGS=0V, VDS=-25V, f=1MHz
- 37 -
MTB080P06L3
CYStek Product Specification


Part Number MTB080P06L3
Description P-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
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