Datasheet Summary
CYStech Electronics Corp.
Spec. No. : C069J3 Issued Date : 2016.03.16 Revised Date : Page No. : 1/ 9
P-Channel Enhancement Mode Power MOSFET
MTB080P06J3 BVDSS ID@VGS=-10V, TC=25°C
RDS(ON)@VGS=-10V, ID=-10A
RDS(ON)@VGS=-5V, ID=-8A
-60V -12.5A 82.5mΩ(typ) 107mΩ(typ)
Features
- Low Gate Charge
- Simple Drive Requirement
- Pb-free Lead Plating & Halogen-free Package
Equivalent Circuit
Outline
TO-252(DPAK)
G：Gate D：Drain S：Source
G DS
Ordering Information
Device MTB080P06J3-0-T3-G
Package
TO-252 (Pb-free lead plating & halogen-free package)
Shipping 2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS pliant products, G for RoHS pliant and green...