Datasheet Summary
CYStech Electronics Corp.
Spec. No. : C069N3 Issued Date : 2016.03.24 Revised Date : Page No. : 1/ 9
P-Channel Enhancement Mode MOSFET
BVDSS
ID@VGS=-10V, TA=25°C
RDSON(TYP)
VGS=-10V, ID=-2A VGS=-4.5V, ID=-1.7A
-60V -2.5A
80mΩ 109mΩ
Features
- Advanced trench process technology
- High density cell design for ultra low on resistance
- Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
SOT-23 D
G：Gate S：Source D：Drain
Ordering Information
Device MTB080P06N3-0-T1-G
Package
SOT-23 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / tape & reel
Environment friendly grade : S for RoHS pliant products, G for RoHS...