Datasheet Details
| Part number | MTB080P06N3 |
|---|---|
| Manufacturer | Cystech Electonics |
| File Size | 410.12 KB |
| Description | P-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 MTB080P06N3 Datasheet
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Key Features
- Advanced trench process technology.
- High density cell design for ultra low on resistance.
- Pb-free lead plating and halogen-free package Equivalent Circuit MTB080P06N3 Outline SOT-23 D G：Gate S：Source D：Drain GS Ordering Information Device MTB080P06N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Pa.