MTB080P06N3 Overview
CYStech Electronics Corp. 2016.03.24 Revised Date.
MTB080P06N3 Key Features
- Advanced trench process technology -High density cell design for ultra low on resistance -Pb-free lead plating and halog
| Part number | MTB080P06N3 |
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| Datasheet | MTB080P06N3-CystechElectonics.pdf |
| File Size | 410.12 KB |
| Manufacturer | Cystech Electonics |
| Description | P-Channel Enhancement Mode Power MOSFET |
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CYStech Electronics Corp. 2016.03.24 Revised Date.
See all Cystech Electonics datasheets
| Part Number | Description |
|---|---|
| MTB080P06N6 | P-Channel Enhancement Mode Power MOSFET |
| MTB080P06J3 | P-Channel Enhancement Mode Power MOSFET |
| MTB080P06L3 | P-Channel Enhancement Mode Power MOSFET |
| MTB080P06M3 | P-Channel Enhancement Mode Power MOSFET |
| MTB080P06Q8 | P-Channel Enhancement Mode Power MOSFET |
| MTB080C10Q8 | N- and P-channel enhancement mode power MOSFET |
| MTB011N10RQ8 | N-Channel Enhancement Mode Power MOSFET |
| MTB012N04J3 | N-Channel Enhancement Mode Power MOSFET |
| MTB012N04Q8 | N-Channel Enhancement Mode Power MOSFET |
| MTB012N10RQ8 | N-Channel Enhancement Mode Power MOSFET |