MTB080P06N3 Overview
CYStech Electronics Corp. 2016.03.24 Revised Date.
MTB080P06N3 Key Features
- Advanced trench process technology -High density cell design for ultra low on resistance -Pb-free lead plating and halog
MTB080P06N3 Details
| Part number | MTB080P06N3 |
|---|---|
| Datasheet | MTB080P06N3-CystechElectonics.pdf |
| File Size | 410.12 KB |
| Manufacturer | Cystech Electonics |
| Description | P-Channel Enhancement Mode Power MOSFET |
|
|