• Part: MTB080P06N6
  • Description: P-Channel Enhancement Mode Power MOSFET
  • Manufacturer: Cystech Electonics
  • Size: 464.75 KB
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Datasheet Summary

CYStech Electronics Corp. Spec. No. : C069N6 Issued Date : 2016.03.24 Revised Date : 2016.04.15 Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS ID@VGS=-4.5V, TC=25°C ID@VGS=-4.5V, TA=25°C RDSON(TYP) VGS=-10V, ID=-3A VGS=-4.5V, ID=-2.7A -60V -3.8A -3.0A 79mΩ 107mΩ Features - Simple drive requirement - Low on-resistance - Small package outline - Pb-free lead plating and halogen-free package Equivalent Circuit G:Gate S:Source...