Datasheet Details
| Part number | MTB080P06N6 |
|---|---|
| Manufacturer | Cystech Electonics |
| File Size | 464.75 KB |
| Description | P-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 MTB080P06N6 Datasheet
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Key Features
- Simple drive requirement.
- Low on-resistance.
- Small package outline.
- Pb-free lead plating and halogen-free package Equivalent Circuit MTB080P06N6 G：Gate S：Source D：Drain Absolute Maximum Ratings (Ta=25°C) Drain-Source Voltage Gate-Source Voltage Parameter TC=25 °C, VGS=-10V Continuous Drain Current TC=70 °C, VGS=-10V TA=25 °C, VGS=-10V (Note 1) TA=70 °C, VGS=-10V (Note 1) Pulsed Drain Current (Note 2, 3) TC=25 °C Total Power Dissipation TC=70 °C T.