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MTB080P06L3 - P-Channel Enhancement Mode Power MOSFET

Key Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Pb-free lead plating & Halogen-free package -60V -3.3A 90mΩ (typ) 117mΩ (typ) Equivalent Circuit MTB080P06L3 G：Gate D：Drain S：Source Outline SOT-223 D S D G Ordering Information Device MTB080P06L3-0-T3-G Package SOT-223 (Pb-free lead plating & Halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec.

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Datasheet Details

Part number MTB080P06L3
Manufacturer Cystech Electonics
File Size 422.91 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB080P06L3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C069L3 Issued Date : 2016.03.14 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTB080P06L3 BVDSS ID @ TA=25°C, VGS=-10V RDSON@VGS=-10V, ID=-4A RDSON@VGS=-4.5V, ID=-2A Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating & Halogen-free package -60V -3.