MTB080P06L3 Overview
CYStech Electronics Corp. 2016.03.14 Revised Date.
MTB080P06L3 Key Features
- Low Gate Charge
- Simple Drive Requirement
- Pb-free lead plating & Halogen-free package
- 60V -3.3A 90mΩ (typ) 117mΩ (typ)
| Part number | MTB080P06L3 |
|---|---|
| Datasheet | MTB080P06L3-CystechElectonics.pdf |
| File Size | 422.91 KB |
| Manufacturer | Cystech Electonics |
| Description | P-Channel Enhancement Mode Power MOSFET |
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CYStech Electronics Corp. 2016.03.14 Revised Date.
See all Cystech Electonics datasheets
| Part Number | Description |
|---|---|
| MTB080P06J3 | P-Channel Enhancement Mode Power MOSFET |
| MTB080P06M3 | P-Channel Enhancement Mode Power MOSFET |
| MTB080P06N3 | P-Channel Enhancement Mode Power MOSFET |
| MTB080P06N6 | P-Channel Enhancement Mode Power MOSFET |
| MTB080P06Q8 | P-Channel Enhancement Mode Power MOSFET |
| MTB080C10Q8 | N- and P-channel enhancement mode power MOSFET |
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| MTB012N04J3 | N-Channel Enhancement Mode Power MOSFET |
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| MTB012N10RQ8 | N-Channel Enhancement Mode Power MOSFET |