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MTB100A10KRH8 Datasheet Preview

MTB100A10KRH8 Datasheet

Dual N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C059H8
Issued Date : 2016.11.01
Revised Date : 2018.04.16
Page No. : 1/ 10
Dual N-Channel Enhancement Mode Power MOSFET
MTB100A10KRH8 BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TC=100°C
Features
Low On Resistance
Simple Drive Requirement
Low Gate Charge
ID@VGS=10V, TA=25°C
ID@VGS=10V, TA=70°C
RDS(ON)@VGS=10V, ID=2A
RDS(ON)@VGS=4.5V, ID=2A
Fast Switching Characteristic
ESD protected gate
Pb-free lead plating and Halogen-free package
100V
8A
5.1A
2.7A
2.2A
100mΩ(typ)
120mΩ(typ)
Equivalent Circuit
MTB100A10KRH8
Outline
Pin 1
DFN5×6
Pin 1
GGate DDrain SSource
Ordering Information
Device
MTB100A10KRH8-0-T6-G
MTB100A10KRH8
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
CYStek Product Specification




Cystech Electonics

MTB100A10KRH8 Datasheet Preview

MTB100A10KRH8 Datasheet

Dual N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C059H8
Issued Date : 2016.11.01
Revised Date : 2018.04.16
Page No. : 2/ 10
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TC=25°C, VGS=10V
(Note 1)
Continuous Drain Current @TC=100°C, VGS=10V
(Note 1)
Continuous Drain Current @TA=25°C, VGS=10V
(Note 2)
Continuous Drain Current @TA=70°C, VGS=10V
(Note 2)
Pulsed Drain Current @ VGS=10V
(Note 3)
Avalanche Current@L=100μH
(Note 3)
Single Pulse Avalanche Energy @ L=1mH, ID=8A, VDD=50V (Note 5)
Repetitive Avalanche Energy
(Note 3)
TC=25°C
(Note 1)
Power Dissipation
TC=100°C
TA=25°C
(Note 1)
(Note 2)
TA=70°C
(Note 2)
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
Symbol
VDS
VGS
ID
IDSM
IDM
IAS
EAS
EAR
PD
PDSM
Tj, Tstg
Limits
100
±20
8
5.1
2.7
2.2
20
15
32
2.1
15.6
6.2
1.8
1.2
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 4)
Symbol
RθJC
RθJA
Value
8
70
Unit
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in² FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The value in any given application depends on the user’s specific board design. The
power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C.
3. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C.
4. When mounted on1 in² copper pad of FR-4 board ; 125°C/W when mounted on minimum copper pad.
5. 100% tested by conditions of L=0.1mH, IAS=7A, VGS=10V, VDD=25V.
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
100
-
- V VGS=0V, ID=250μA
BVDSS/Tj
-
0.07
-
V/°C Reference to 25°C, ID=250μA
VGS(th)
1.0
-
2.5 V VDS = VGS, ID=250μA
*GFS
- 5.9 -
S VDS =10V, ID=5A
IGSS - - ±10
VGS=±16V
IDSS
- - 1 μA VDS =80V, VGS =0V
- - 25
VDS =80V, VGS =0V, Tj=85°C
MTB100A10KRH8
CYStek Product Specification


Part Number MTB100A10KRH8
Description Dual N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
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