MTB100A10KRH8 - Dual N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Datasheet Details

Part number	MTB100A10KRH8
Manufacturer	Cystech Electonics
File Size	831.41 KB
Description	Dual N-Channel Enhancement Mode Power MOSFET
Datasheet	MTB100A10KRH8-CystechElectonics.pdf

Low On Resistance.
Simple Drive Requirement.
Low Gate Charge ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=2A RDS(ON)@VGS=4.5V, ID=2A.
Fast Switching Characteristic.
ESD protected gate.
Pb-free lead plating and Halogen-free package 100V 8A 5.1A 2.7A 2.2A 100mΩ(typ) 120mΩ(typ) Equivalent Circuit MTB100A10KRH8 Outline Pin 1 DFN5×6 Pin 1 G：Gate D：Drain S：Source Ordering Information Device MTB100A10KRH8-0-T6-G MTB100A10KR.

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Published: Dec 4, 2016 |