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Cystech Electonics

MTB110P08KN6 Datasheet Preview

MTB110P08KN6 Datasheet

P-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C123N6
Issued Date : 2015.11.24
Revised Date :
Page No. : 1/8
-80V P-Channel Enhancement Mode Power MOSFET
MTB110P08KN6 BVDSS
ID@VGS=-10V, TC=25°C
ID@VGS=-10V, TA=25°C
RDSON(TYP)
VGS=-10V, ID=-2A
VGS=-4.5V, ID=-1A
-80V
-3.7A
-2.9A
104mΩ
141mΩ
Features
Simple drive requirement
Low on-resistance
Small package outline
Pb-free lead plating and halogen-free package
ESD protected gate
Equivalent Circuit
MTB110P08KN6
GGate SSource DDrain
Absolute Maximum Ratings (Ta=25°C)
Drain-Source Voltage
Gate-Source Voltage
Parameter
TC=25 °C, VGS=-10V
Continuous Drain Current
TC=70 °C, VGS=-10V
TA=25 °C, VGS=-10V (Note 1)
TA=70 °C, VGS=-10V (Note 1)
Pulsed Drain Current (Note 2, 3)
TC=25 °C
Total Power Dissipation
TC=70 °C
TA=25 °C
(Note 1)
TA=70 °C
(Note 1)
Operating Junction Temperature and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
Tj, Tstg
Limits
-80
±20
-3.7
-3.0
-2.9
-2.3
-20
3.2
2.1
2.0
1.25
-55~+150
Unit
V
A
W
°C
Thermal Data
Parameter
Symbol
Value
Thermal Resistance, Junction-to-case, max
Rth,j-c
39
Thermal Resistance, Junction-to-ambient, max (Note 1)
RθJA
62.5
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t5 sec. 156/W when mounted on minimum copper pad.
2.Pulse width limited by maximum junction temperature.
3.Pulse Width 300μs, Duty Cycle2%
Unit
°C/W
MTB110P08KN6
CYStek Product Specification




Cystech Electonics

MTB110P08KN6 Datasheet Preview

MTB110P08KN6 Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C123N6
Issued Date : 2015.11.24
Revised Date :
Page No. : 2/8
Electrical Characteristics (Ta=25°C, unless otherwise noted)
Symbol
Min. Typ. Max. Unit
Test Conditions
Static
BVDSS
-80 -
- V VGS=0V, ID=-250μA
ΔBVDSS/ΔTj - -0.08 - V/Reference to 25, ID=-250μA
VGS(th)
-1.0 -
-2.5 V VDS=VGS, ID=-250μA
IGSS - - ±10
VGS=±20V, VDS=0V
IDSS
- - -1 μA VDS=-80V, VGS=0V
- - -10
VDS=-64V, VGS=0V, Tj=70
*RDS(ON)
-
-
104
141
135
185
mΩ
ID=-2A, VGS=-10V
ID=-1A, VGS=-4.5V
*GFS
- 5.2
-
S VDS=-10V, ID=-2A
Dynamic
Ciss
Coss
Crss
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
- 537
- 52
- 37
- 7.4
- 17.4
- 36
- 24.8
- 7.4
- 2.2
- 3.2
-
-
-
-
-
-
-
-
-
-
pF VDS=-30V, VGS=0V, f=1MHz
ns VDS=-40V, ID=-1A, VGS=-10V, RG=10Ω
nC VDS=-40V, ID=-2A, VGS=-5V
Source-Drain Diode
*IS
*ISM
-
-
-
-
-4
-16
A
*VSD
- -0.8 -1.2 V VGS=0V, IS=-2A
*Trr
Qrr
- 14
- 9.5
-
-
ns
nC
IF=-2A,VGS=0V, dIF/dt=100A/μs
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
Ordering Information
Device
MTB110P08KN6-0-T1-G
Package
SOT-26
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
MTB110P08KN6
CYStek Product Specification


Part Number MTB110P08KN6
Description P-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
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MTB110P08KN6 Datasheet PDF





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